Mitsuhiro Tanaka

发表

Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

High Damage Resistivity of Optical Surface for UV Lasers by Ion Beam Etching

Masashi Yoshimura, Yusuke Mori, Tetsuo Kojima, 1999 .

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

Eva Monroy, Tomohiko Shibata, N. Gogneau, 2003 .

GaN quantum dots doped with Eu

Osamu Oda, Eva Monroy, Le Si Dang, 2004 .

Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes

Makoto Miyoshi, T. Egawa, Youhua Zhu, 2008 .

Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates

Yusuke Sakai, Makoto Miyoshi, Takashi Egawa, 2010 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates

Makoto Miyoshi, Takashi Egawa, Tomohiko Shibata, 2008 .

n‐type conductivity control of AlGaN with high Al mole fraction

Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, 2006 .

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Osamu Oda, Keiichiro Asai, Hiroyasu Ishikawa, 2004 .