N. A. Bert

发表

Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates

A. R. Kovsh, N. N. Ledentsov, Yu. M. Shernyakov, 1999 .

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

K. D. Moiseev, Ya. A. Parkhomenko, E. V. Gushchina, 2009 .

Enhanced As-Sb intermixing of GaSb monolayer superlattices in low- temperature grown GaAs

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2001 .

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Self-organizing nanoheterostructures in InGaAsP solid solutions

N. N. Faleev, V. A. Kapitonov, I. S. Tarasov, 1998 .

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

K. D. Moiseev, Ya. A. Parkhomenko, L. A. Sokura, 2017 .

In–Ga intermixing in low-temperature grown GaAs delta doped with In

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 1999 .

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2009 .

An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix

Nikolai N. Ledentsov, Igor L. Krestnikov, Dieter Bimberg, 1996 .