T. Osada

High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 Symposium on VLSI Technology.

Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 Symposium on VLSI Technology.

High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 IEEE International Electron Devices Meeting.

Standardized procedure for calibrating height scales in atomic force microscopy on the order of 1 nm

Y. Suzuki, Mineharu Suzuki, T. Osada, 1996 .

High electron mobility triangular InGaAs-OI nMOSFETs with (111)B side surfaces formed by MOVPE growth on narrow fin structures

T. Tezuka, O. Ichikawa, Y. Miyamoto, 2013, 2013 IEEE International Electron Devices Meeting.