Jiro Osaka

Homogeneity of Vertical Magnetic Field Applied LEC GaAs Crystal

Kobayashi Takashi, Keigo Hoshikawa, K. Hoshikawa, 1984 .

Highly Uniform Regrown In0.53Ga0.47As/AlAs/InAs Resonant Tunneling Diodes on In0.53Ga0.47As

Koichi Maezawa, K. Maezawa, J. Osaka, 1999 .

Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-µm-gate High Electron Mobility Transistors for High-Speed ICs

Kimikazu Sano, Hideaki Matsuzaki, Koichi Murata, 2001 .

High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

Hideaki Matsuzaki, Koichi Maezawa, Taiichi Otsuji, 1998 .

Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition

Koichi Maezawa, Haruki Yokoyama, Masafumi Yamamoto, 1998 .

A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)

Hideaki Matsuzaki, Koichi Maezawa, Taiichi Otsuji, 1998 .

An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode

Kimikazu Sano, Eiichi Sano, Naofumi Shimizu, 1999 .