Jifeng Liu

发表

Efficient above-band-gap light emission in germanium

Jurgen Michel, Lionel C. Kimerling, Eugene A. Fitzgerald, 2009 .

Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

Jurgen Michel, Lionel C. Kimerling, J. Michel, 2012 .

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Lionel C. Kimerling, 2003 .

Efficiency enhancement in Si solar cells by textured photonic crystal back reflector

Yasha Yi, Ching-yin Hong, Lionel C. Kimerling, 2006 .

Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

Jurgen Michel, Lionel C. Kimerling, Mark Beals, 2008 .

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.

Jurgen Michel, Xiaochen Sun, J. Michel, 2009, Optics letters.

Design of Highly Efficient Light-Trapping Structures for Thin-Film Crystalline Silicon Solar Cells

J. Michel, Ning-Ning Feng, Xiaoman Duan, 2007, IEEE Transactions on Electron Devices.

Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

Wei Du, Richard Soref, Wei Dou, 2019, ACS Photonics.

Ge-on-Si optoelectronics

Jurgen Michel, Lionel C. Kimerling, Xiaochen Sun, 2012 .

High performance Ge p-i-n photodetectors on Si

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2005 .

Ge-on-Si integrated photonics: New tricks from an old semiconductor

L C Kimerling, J Michel, Jifeng Liu, 2010, 2010 IEEE Photinic Society's 23rd Annual Meeting.

Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si

Wei Du, Richard Soref, Wei Dou, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2005 .

Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si ( 100 )

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Breaking the Energy-Bandwidth Limit of Electrooptic Modulators: Theory and a Device Proposal

Hongtao Lin, Juejun Hu, Jurgen Michel, 2013, Journal of Lightwave Technology.

High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2005 .

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Band-engineered Ge as gain medium for Si-based laser

Jurgen Michel, Thomas L Koch, Lionel C. Kimerling, 2008 .

Monolithic Silicon Microphotonics

Kazumi Wada, Michael R. Watts, Jurgen Michel, 2004 .

Ultralow energy, integrated GeSi electroabsorption modulators on SOI

J. Michel, A. Pomerene, M. Beals, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Direct-gap optical gain of Ge on Si at room temperature.

Jurgen Michel, Xiaochen Sun, J. Michel, 2009, Optics letters.

Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform.

Kazumi Wada, Jurgen Michel, Samerkhae Jongthammanurak, 2007, Optics express.

High performance, waveguide integrated Ge photodetectors.

Jurgen Michel, Franz X Kärtner, Mark Beals, 2007, Optics express.

New optical technology for low mass intelligent trigger and readout

Jurgen Michel, Lionel C. Kimerling, Robert Stanek, 2010 .

Ge Photodetectors Integrated with Waveguides for Electronic-Photonic Integrated Circuits on CMOS Platform

Jian Chen, J. Michel, Ching-yin Hong, 2007, OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference.

Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers

Qinglin Zhang, Xiaobai Yu, Juchuan Li, 2014 .

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Wei Du, Richard A. Soref, Wei Dou, 2017 .

Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion

Xuejun Xu, Keisuke Nishida, Kentarou Sawano, 2015 .

Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector

Peter Bermel, John D. Joannopoulos, Yasha Yi, 2008 .

Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics

J. Brouillet, Jifeng Liu, Haofeng Li, 2013 .

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Jurgen Michel, Lionel C. Kimerling, Xiaochen Sun, 2009 .

Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers

Jifeng Liu, Xiaoxin Wang, Jifeng Liu, 2016 .

Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures

J. Michel, Zhaohong Han, J. Michel, 2013, IEEE Journal of Selected Topics in Quantum Electronics.

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Wei Du, Richard A. Soref, Wei Dou, 2016 .

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2007 .

Towards a Ge-based laser for CMOS applications

J. Michel, Xiaochen Sun, P. Becla, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics

Wei Du, Seyed Amir Ghetmiri, Huong Tran, 2019, 2019 International Topical Meeting on Microwave Photonics (MWP).

Breaking the energy-bandwidth limit of electro-optic modulators: Theory and a device proposal

Hongtao Lin, Juejun Hu, Jurgen Michel, 2013, CLEO: 2013.

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.

Jurgen Michel, Thomas L Koch, Xiaochen Sun, 2007, Optics express.