D. Ferre

AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: from material to device

M. Zaknoune, S. Bollaert, Y. Cordier, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

P. Lorenzini, Jean-Michel Chauveau, Yvon Cordier, 2003 .

0.1 /spl mu/m high performance metamorphic In/sub 0.32/Al/sub 0.68/As/In/sub 0.33/Ga/sub 0.67/As HEMT on GaAs using inverse step InAlAs buffer

Y. Crosnier, Sylvain Bollaert, Yvon Cordier, 1999 .

0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Y. Crosnier, Sylvain Bollaert, Yvon Cordier, 2000 .

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

P. Lorenzini, D. Vignaud, Y. Cordier, 2002, International Conference on Molecular Bean Epitaxy.