B. Jogai

发表

EFFECT OF IN-PLANE BIAXIAL STRAINS ON THE BAND STRUCTURE OF WURTZITE GAN

B. Jogai, 1998 .

Optically pumped ultraviolet lasing from ZnO

D. C. Reynolds, David C. Look, D. Look, 1996 .

Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO

D. C. Reynolds, Michael J. Callahan, David C. Look, 2000 .

Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

B. Jogai, B. Jogai, 2003 .

Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals

D. C. Reynolds, David C. Look, Cole W. Litton, 1998 .

Independence of peak current from emitter spacer layer width in AlGaAs/GaAs resonant tunneling diodes

E. T. Koenig, B. Jogai, C. I. Huang, 1990 .

Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors

Ravindra P. Joshi, Viswanadham Sridhara, B. Jogai, 2003 .

Novel type II strained layer superlattices for long wavelength infrared detectors

John P. Loehr, J. Loehr, B. Jogai, 1998 .