K. Tachi

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

O. Faynot, G. Ghibaudo, T. Ernst, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006 .

Ultra-dense silicon nanowires: A technology, transport and interfaces challenges insight (invited)

Sylvain Barraud, P. Brianceau, T. Magis, 2011 .

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

O. Faynot, G. Ghibaudo, T. Ernst, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate

Thomas Ernst, M. Casse, M. Cassé, 2010 .

Impact of Thin La2O3 Insertion for HfO2 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008 .

Effect of Oxygen for Ultra-Thin La2O3 Film Deposition

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .