J. McKenna

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides

Jordi Suñé, Ernest Y. Wu, Edward J. Nowak, 2001 .

Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

Ernest Y. Wu, Edward J. Nowak, A. Vayshenker, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

R. Bolam, M. Khare, J. Sune, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage

A. Vayshenker, J. McKenna, E. Cartier, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

E. Nowak, J. Sune, J. McKenna, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database

Ernest Y. Wu, Edward J. Nowak, A. Vayshenker, 2001 .