M. Schulz

发表

Coulomb energy of traps in semiconductor space‐charge regions

M. Schulz, M. Schulz, 1993 .

Process‐Induced Interface and Bulk States in MOS Structures

M. Schulz, M. Schulz, K. Hofmann, 1985 .

Tayloring of the Schottky barrier height of Pt-Ir mixed silicide infrared detectors

M. Schulz, P. Lahnor, D. Worle, 1996 .

Conductance modulation of submicrometer metal–oxide–semiconductor field‐effect transistors by single‐electron trapping

M. Schulz, M. Schulz, H. H. Mueller, 1996 .

Individual interface traps at the Si—SiO2 interface

M. Schulz, H. H. Mueller, 1995 .

Transient capacitance measurements of hole emission from interface states in MOS structures

N. M. Johnson, M. Schulz, N. Johnson, 1977 .

Random telegraph signal: An atomic probe of the local current in field-effect transistors

M. Schulz, M. Schulz, H. H. Mueller, 1998 .

Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

M. Schulz, H. H. Mueller, D. Wörle, 1994 .

Individual interface traps at the Si-SiO2 interface

M. Schulz, M. Schulz, H. H. Mueller, 1994 .

Statistical evaluation of random telegraph signal amplitudes in sub-μm MOSFETs

M. Schulz, M. Schulz, H. H. Mueller, 1997 .

Single-electron trapping at semiconductor interfaces

M. Schulz, M. Schulz, H. H. Mueller, 1996 .