Jin-Hong Park

发表

Surface group modification and carrier transport properties of layered transition metal carbides (Ti2CT(x), T: -OH, -F and -O).

Jaeho Jeon, Shen Lai, Sungjoo Lee, 2015, Nanoscale.

Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure

Yongsuk Choi, Seyong Oh, Seunghwan Seo, 2018, Advanced Functional Materials.

The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics

Duygu Kuzum, Tejas Krishnamohan, K. Saraswat, 2011, IEEE Transactions on Electron Devices.

Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate

Krishna C. Saraswat, Pawan Kapur, Munehiro Tada, 2008 .

Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and high-k/metal gate stack for monolithic 3D integration

P. Kapur, M. Tada, Hyun-Yong Yu, 2008, 2008 IEEE International Electron Devices Meeting.

Graphene/black phosphorus heterostructured photodetector

Young Jae Song, Sungjoo Lee, Sungjoo Lee, 2018, Solid-State Electronics.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

Dong-Ho Kang, Sanghun Jeon, Jaewoo Shim, 2017, ACS applied materials & interfaces.

p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

Hyun-Yong Yu, M. Ishibashi, K. Saraswat, 2009, IEEE Electron Device Letters.

Nam-Gyu Park, N. Park, Jin-Hong Park, 2019, Nanoscale.

Self-Assembled Layer (SAL)-Based Doping on Black Phosphorus (BP) Transistor and Photodetector

Dong-Ho Kang, Geun Young Yeom, Jinok Kim, 2017 .

Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Krishna C. Saraswat, Changhwan Shin, Byung Jin Cho, 2015, IEEE Electron Device Letters.

Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications

Won-Kyu Park, Jae Su Yu, Jung Woo Leem, 2014 .

N-Channel Germanium MOSFET Fabricated Below 360 $^{ \circ}\hbox{C}$ by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs

Jin-Hong Park, D Kuzum, Woo-Shik Jung, 2011, IEEE Electron Device Letters.

Layer-controlled CVD growth of large-area two-dimensional MoS2 films.

Yun Hee Jang, Jaeho Jeon, Sungjoo Lee, 2015, Nanoscale.

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Jaeho Jeon, Sungjoo Lee, Sungjoo Lee, 2015, IEEE Transactions on Nanotechnology.

High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation

Duygu Kuzum, Krishna C. Saraswat, Munehiro Tada, 2008 .

M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity

Dong-Ho Kang, Sreekantha Reddy Dugasani, Jaeho Jeon, 2016, Scientific Reports.

Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.

Shen Lai, Sungjoo Lee, Sungjoo Lee, 2015, ACS nano.

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.

Dong-Ho Kang, Changhwan Shin, Seunghwan Seo, 2019, Nanoscale.

Solar-stimulated optoelectronic synapse based on organic heterojunction with linearly potentiated synaptic weight for neuromorphic computing

Yongsuk Choi, Junliang Yang, Chuan Qian, 2019 .

A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits

Krishna C. Saraswat, Pawan Kapur, Hailin Peng, 2007 .

Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits

Krishna C. Saraswat, Pawan Kapur, Munehiro Tada, 2008 .

Correction of Critical Dimension Uniformity on a Wafer by Controlling Back-Surface Transmittance Distribution of a Photomask

Sung-Woon Choi, Jong Rak Park, Byung-Cheol Cha, 2004 .

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

H.-S. Philip Wong, Krishna C. Saraswat, Munehiro Tada, 2009 .

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors.

Dong-Ho Kang, Jeong Ho Cho, Sungjoo Lee, 2018, ACS applied materials & interfaces.

Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application

Dong-Ho Kang, Jaewoo Shim, Jinok Kim, 2017 .