Doo-Hyeb Youn

发表

Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse

Byung-Gyu Chae, Kwang-Yong Kang, D. Youn, 2005 .

Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe2/MoS2 Heterostructure for Ambipolar Field‐Effect Transistors

Lijun Li, James Hone, Sun Jin Yun, 2016, Advanced materials.

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

Takashi Taniguchi, Kenji Watanabe, Sun Jin Yun, 2018, Nanotechnology.

High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Ilesanmi Adesida, V. Kumar, R. Schwindt, 2003 .

Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes

Choon-Gi Choi, Sung-Yool Choi, Young-Jun Yu, 2013, Nanotechnology.

Highly oriented VO2 thin films prepared by sol-gel deposition method

Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, 2005 .

Electrohydrodynamic micropatterning of silver ink using near-field electrohydrodynamic jet printing with tilted-outlet nozzle

Ji-Beom Yoo, D. Youn, Ji-Beom Yoo, 2009 .

Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

Gyungock Kim, Byung-Gyu Chae, Kwang-Yong Kang, 2004 .

Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Gyungock Kim, Byung-Gyu Chae, Kwang-Yong Kang, 2005 .