Johann C. Rode

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Mark J. W. Rodwell, Vibhor Jain, Miguel Urteaga, 2015, IEEE Transactions on Electron Devices.

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Mark J. W. Rodwell, Vibhor Jain, Miguel Urteaga, 2015, IEEE Journal of the Electron Devices Society.

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Vibhor Jain, J. M. Fastenau, Miguel Urteaga, 2011, 69th Device Research Conference.

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced Ccb and increased RF cut‐off frequency

Mark J. W. Rodwell, Brian Thibeault, Vibhor Jain, 2013 .

An 81 GHz, 470 mW, 1.1 mm2 InP HBT power amplifier with 4∶1 series power combining using sub-quarter-wavelength baluns

Hyun-chul Park, Saeid Daneshgar, Zach Griffith, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

High efficiency W-band power amplifiers using ring-shaped sub-quarter-wavelength power combining technique

Mark J. W. Rodwell, Hyun-chul Park, Saeid Daneshgar, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

30% PAE W-Band InP Power Amplifiers Using Sub-Quarter-Wavelength Baluns for Series-Connected Power-Combining

Hyun-chul Park, Saeid Daneshgar, Zach Griffith, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors

Mark J. W. Rodwell, Prateek Choudhary, Johann C. Rode, 2014 .