Ha Sul Kim

发表

Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

Elena Plis, Sanjay Krishna, Ganesh Balakrishnan, 2010 .

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

Arezou Khoshakhlagh, Elena Plis, Stephen Myers, 2010 .

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Elena Plis, Sanjay Krishna, 2010, Nature.

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Elena Plis, Sanjay Krishna, Yu-Lun Chueh, 2011 .

Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices

S. Krishna, S. Myers, N. Gautam, 2013, IEEE Journal of Quantum Electronics.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

Jing Guo, Sanjay Krishna, Yu-Lun Chueh, 2012, Nano letters.

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Elena Plis, Stephen Myers, Nutan Gautam, 2011 .

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Hui Li, Yong-Hang Zhang, Zhao-Yu He, 2012 .

Ultrathin body InAs tunneling field-effect transistors on Si substrates

Elena Plis, Sanjay Krishna, Chenming Hu, 2011 .

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Elena Plis, Nutan Gautam, M. N. Kutty, 2010 .

Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

Elena Plis, Stephen Myers, Nutan Gautam, 2010 .