M. A. Khan

发表

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

Henryk Temkin, Andrei Osinsky, Remigijus Gaska, 1998 .

Exciton and carrier motion in quaternary AlInGaN

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2003 .

Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2003 .

Piezoresistive effect in wurtzite n‐type GaN

Michael S. Shur, Alexei Bykhovski, M. Shur, 1996 .

AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW

Max Shatalov, Vinod Adivarahan, S. Wu, 2004 .

A new assessment of the use of wide bandgap semiconductors and the potential for GaN

Jerry L. Hudgins, Grigory Simin, J. Hudgins, 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire

Michael G. Spencer, Xiao Tang, Agis A. Iliadis, 1997 .

Optical bandgap formation in AlInGaN alloys

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2000 .

AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Ilesanmi Adesida, M. Khan, I. Adesida, 2001 .

Interfacial Reactions Between Metal Thin Films and p-GaN

Paul H. Holloway, P. Holloway, M. Khan, 1995 .

MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters

Vinod Adivarahan, M. Khan, D. Blom, 2011 .

Optical modes within III-nitride multiple quantum well microdisk cavities

K. C. Zeng, Bei-Wei Zhang, R. A. Mair, 1998 .

Acousto-optic diffraction of blue and red light in GaN

Michael S. Shur, Daumantas Ciplys, Romualdas Rimeika, 2002 .

Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

Michael S. Shur, Lester F. Eastman, Jinwook Burm, 1996 .

Finite‐Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers

Michael S. Shur, Albertas Žukauskas, Gintautas Tamulaitis, 1999 .

Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers

Remis Gaska, Gintautas Tamulaitis, R. Aleksiejūnas, 2005 .

Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

Michael S. Shur, M. Shur, M. Khan, 1994 .

AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

Vinod Adivarahan, M. A. Khan, Jianping Zhang, 2003 .

AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Michael S. Shur, A. Lunev, Max Shatalov, 2004 .

Low noise p-π-n GaN ultraviolet photodetectors

Henryk Temkin, Andrei Osinsky, Remigijus Gaska, 1997 .

Luminescence from stacking faults in gallium nitride

C. Q. Chen, Fernando Ponce, M. Khan, 2005 .

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Hongxing Jiang, M. Khan, J. Lin, 1998 .

Photoluminescence of AlGaN grown on bulk AlN substrates

Michael S. Shur, Remigijus Gaska, G. Tamulaitis, 2004 .

Low-frequency noise and performance of GaN p-n junction photodetectors

Henryk Temkin, Remis Gaska, D. V. Kuksenkov, 1998 .

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Michael S. Shur, Kestutis Jarasiunas, Arturas Zukauskas, 2005 .

Study of contact formation in AlGaN/GaN heterostructures

M. Khan, J. Yang, S. Lau, 1997 .

Schottky barrier photodetectors based on AlGaN

Henryk Temkin, Andrei Osinsky, M. Khan, 1998 .

Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates

Michael S. Shur, Michael E. Levinshtein, S. L. Rumyantsev, 2000 .

Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Michael S. Shur, M. Shur, M. Khan, 1995 .

Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Vinod Adivarahan, M. Khan, V. Adivarahan, 2012 .

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

Michael S. Shur, V. Gudelis, Remis Gaska, 2003 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .