Bing Xie

发表

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2014 .

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Yilong Hao, Yufeng Jin, Cheng P. Wen, 2018, IEEE Electron Device Letters.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Xiaohua Ma, Yang Liu, Min Yu, 2013, IEEE Electron Device Letters.

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Yilong Hao, Min Yu, Wengang Wu, 2015, IEEE Electron Device Letters.

900 V/1.6 Normally Off MOSFET on Silicon Substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2014 .

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Yilong Hao, Wengang Wu, Dawei Yan, 2014, IEEE Electron Device Letters.

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Yilong Hao, Wengang Wu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Yilong Hao, Wengang Wu, Kevin J. Chen, 2015, IEEE Transactions on Electron Devices.