J. W. Liang

发表

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

Hongliang Gong, H. Yang, H. Gong, 2006 .

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Z. Liu, Hui Yang, Dongshan Zhao, 2007 .

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Z. S. Liu, Hui Yang, X. Y. Li, 2006 .

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

X. Y. Li, Z. Liu, Hui Yang, 2006 .

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

Z. G. Wang, Baojian Xu, Q. Gong, 1998 .

Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?

H. Yang, J. Zhu, J. W. Liang, 2007 .

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

J. Han, Hui Yang, Xinhe Zheng, 2001 .

Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

X. Y. Li, Z. Liu, Hui Yang, 2007 .

Strain evolution in GaN layers grown on high-temperature AlN interlayers

H. Yang, Dongshan Zhao, D. Jiang, 2006 .

Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

Bingsen Zhang, H. Yang, Dongshan Zhao, 2002 .

Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

Bo Zhang, H. Yang, Xinhe Zheng, 2002 .

Space-charge-limited currents in GaN Schottky diodes

Z. Liu, H. Yang, Degang Zhao, 2005 .

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

H. Yang, Dongshan Zhao, M. Chong, 2006 .

The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition

Z. Liu, Hui Yang, J. Zhu, 2008 .