J.-P. Faurie

Nitride-based photodetectors: from visible to X-ray monitoring

Pierre Gibart, Bernard Beaumont, Jose Luis Pau, 2004 .

Electrical and optical proprieties of photodiodes based on ZnSe material

A. Bouhdada, F. Vigué, J.-P. Faurie, 2003 .

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

S. Sivananthan, Robert Sporken, M. Boukerche, 1989 .

Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Eric Tournié, F. Vigué, J.-P. Faurie, 2000 .

p-type doping of Zn(Mg)BeSe epitaxial layers

Eric Tournié, É. Tournié, J.-P. Faurie, 1999 .

Epitaxial lift-off in photovoltaics:ultra thin Al/sub 0.2/Ga/sub 0.8/As cell in a mechanically stacked (Al,Ga)As/Si tandem

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

Philippe Brunet, Eric Tournié, P. Lorenzini, 1999 .

Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

Eric Tournié, É. Tournié, M. Nadal, 2002 .