Bo Song

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Yu Cao, A. Verma, Ronghua Wang, 2013, IEEE Electron Device Letters.

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Yu Cao, Zongyang Hu, Ronghua Wang, 2013, IEEE Electron Device Letters.

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Xiang Gao, Zongyang Hu, Tian Fang, 2012, IEEE Electron Device Letters.

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Xiang Gao, P. Saunier, A. Ketterson, 2013, IEEE Electron Device Letters.

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2015 .