Wayne Johnson

发表

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

High linearity nanowire channel GaN HEMTs

Yu Cao, Paul Saunier, Michael Schuette, 2013, 71st Device Research Conference.

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors

Yu Cao, Ivan I. Kravchenko, Stephen J. Pearton, 2011 .

Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

John C. Roberts, Yiider Tseng, Hung-Ta Wang, 2007 .

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Jenshan Lin, Stephen J. Pearton, Brent P. Gila, 2005 .

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lin Zhou, Stephen J. Pearton, David J. Smith, 2011 .

Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors

Yu Cao, Ivan I. Kravchenko, Stephen J. Pearton, 2011 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

Differences in nucleation and properties of InN islands formed using two different deposition procedures

Roger E. Welser, Oleg Laboutin, R. Welser, 2010 .