Kuo-Hui Yu

Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kuan-Po Lin, Chin-Chuan Cheng, Kun-Wei Lin, 2001 .

On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure

Tsung-Han Tsai, Chih-Hung Yen, Tzu-Pin Chen, 2009, IEEE Electron Device Letters.

Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes

Shoou-Jinn Chang, Yu-Zung Chiou, Shih-Chang Shei, 2007 .

A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

Tsung-Han Tsai, Chih-Hung Yen, Tzu-Pin Chen, 2008, IEEE Photonics Technology Letters.

Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET

Kuan-Po Lin, Chin-Chuan Cheng, Kun-Wei Lin, 2001 .

Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Chin-Chuan Cheng, Kun-Wei Lin, Shiou-Ying Cheng, 2002 .