D. J. Larkin

发表

Investigation and evaluation of 102-BX tank leak

J. C. Womack, D. J. Larkin, J. Womack, 1971 .

Fundamentals of SiC-Based Device Processing

M. Melloch, J. Cooper, M. R. Melloch, 1997 .

SiC Dopant Incorporation Control Using Site‐Competition CVD

D. J. Larkin, 1997 .

Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

W. J. Choyke, P. Pirouz, J. Powell, 1990 .

Process‐Induced Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell, J. Powell, D. J. Larkin, 1997 .

An Overview of SiC Epitaxial Growth

D. J. Larkin, 1997 .

Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy

W. J. Choyke, R. Devaty, D. J. Larkin, 1995 .

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

J. Powell, A. J. Trunek, D. J. Larkin, 1997 .

Photoluminescence and transport studies of boron in 4H SiC

W. J. Choyke, G. Pensl, R. Devaty, 1998 .

Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers

D. J. Larkin, 1995 .

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

P. Neudeck, C. Salupo, J. Powell, 1993, IEEE Electron Device Letters.

Fiber Coatings Derived from Molecular Precursors

L. Interrante, D. J. Larkin, H. Fischer, 1991 .

Personal Financial Literacy Among U.S. Medical Students

Kishore L Jayakumar, D. J. Larkin, S. Ginzberg, 2017 .

Inflammatory markers associated with osteoarthritis after destabilization surgery in young mice with and without Receptor for Advanced Glycation End-products (RAGE)

P. Reynolds, D. J. Larkin, D. Kooyman, 2013, Front. Physiol..

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

A. Steckl, J. Powell, D. J. Larkin, 1993 .

Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

J. Edgar, J. Powell, D. J. Larkin, 1992 .

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

W. J. Choyke, R. Devaty, H. Kong, 1993 .

High voltage 6H-SiC rectifiers: prospects and progress

P. Neudeck, J. Powell, L. Matus, 1993, 51st Annual Device Research Conference.

Application of chemical vapor deposited yttria for the protection of silicon carbide fibers in a SiC/Ni_3Al composite

L. Interrante, D. J. Larkin, A. Bose, 1990 .

CVD of SiC and AlN using cyclic organometallic precursors

L. Interrante, D. J. Larkin, Carmela C. Amato, 1991 .

Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide

L. Interrante, D. J. Larkin, 1992 .

Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon Carbide

L. Interrante, D. J. Larkin, B. Han, 1990 .

Preparation of the High-Temperature Superconductor YBa2Cu3O7-x

L. Interrante, D. J. Larkin, Zhiping Jiang, 1988 .

Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films

M. Mehregany, L. Matus, D. J. Larkin, 1997 .

Gold, silver and copper nanocrystal formation in SiC by MeV implantation

E. K. Williams, D. Hensley, D. J. Larkin, 2000 .

Site‐competition epitaxy for superior silicon carbide electronics

Philip G. Neudeck, Lawrence G. Matus, P. Neudeck, 1994 .

Formation of Metallic Nanoclusters in SiC by MeV Ion Implantation

E. K. Williams, D. Hensley, D. J. Larkin, 1999 .

Investigation of Low Molecular Weight Carbosilanes as Potential Single-Source Precursors to Silicon Carbide

L. Interrante, M. Lienhard, D. J. Larkin, 1997 .

Surface morphology of silicon carbide epitaxial films

Phillip B. Abel, P. Abel, J. Powell, 1995 .

Growth of improved quality 3C-SiC films on 6H-SiC substrates

W. J. Choyke, P. Pirouz, J. Powell, 1990 .

Elevated Temperature Silicon Carbide Chemical Sensors

D. J. Larkin, M. George, D. Ila, 1999 .

2000 V 6H-SIC P-N JUNCTION DIODES GROWN BY CHEMICAL VAPOR DEPOSITION

Philip G. Neudeck, Lawrence G. Matus, P. Neudeck, 1994 .

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

P. Neudeck, C. Salupo, J. Powell, 1994 .

Optical Properties of Silicon Carbide: Some Recent Developments

W. J. Choyke, T. Kimoto, G. Pensl, 1997 .

Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide

P. Neudeck, J. Powell, L. Matus, 1998 .

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

W. J. Choyke, Á. Gali, R. Devaty, 2006 .

Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC

W. J. Choyke, R. Devaty, D. J. Larkin, 1997 .

Investigation of Defects in Epitaxial 3 CSiC , 4 H-SiC , and 6 H-SiC Films Grown on SiC Substrates

P. Neudeck, P. Pirouz, J. Powell, 1998 .