Tetsuzo Ueda

发表

Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)

Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique

Kaoru Inoue, Daisuke Ueda, Tetsuzo Ueda, 2007, IEICE Electron. Express.

A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters

Satoshi Tamura, Masahiro Ishida, Yusuke Kinoshita, 2016, 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits).

Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)

Tetsuzo Ueda, Kohtaro Tanaka, Masao Uchida, 2016, Microelectron. Reliab..

Characteristics of Isolated DC–DC Converter With Class Phi-2 Inverter Under Various Load Conditions

Yushi Miura, Toshifumi Ise, Tetsuzo Ueda, 2019, IEEE Transactions on Power Electronics.

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide

Takashi Mizutani, Tsuyoshi Tanaka, Tetsuzo Ueda, 2008, IEICE Trans. Electron..

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A high-efficient driving isolated Drive-by-Microwave half-bridge gate driver for a GaN inverter

Osamu Tabata, Tetsuzo Ueda, Yasufumi Kawai, 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

Integrated power design platform based on modeling dynamic behavior of GaN devices

Daisuke Ueda, Yuji Kudoh, Tetsuzo Ueda, 2011, 2011 International Electron Devices Meeting.

Conducted noise of GaN Schottky barrier diode in a DC-DC converter

Tsuyoshi Funaki, Masahiro Ishida, Tetsuzo Ueda, 2015, IEICE Electron. Express.

3-3 Recent Advances and Future Prospects on GaN Power Switching Devices(3. The Forefront of Power Electronics Technology, Cutting-edge Device Technologies in Globally Competitive Fields)

Tetsuzo Ueda, 2012 .

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W

Tomohiro Murata, Tsuyoshi Tanaka, Hiroyuki Sakai, 2012, IEICE Trans. Electron..

Vertical GaN-based power devices on bulk GaN substrates for future power switching systems

Satoshi Tamura, Tetsuzo Ueda, Daisuke Shibata, 2018, OPTO.

Validating GaN Robustness

Kenichiro Tanaka, Tetsuzo Ueda, Ayanori Ikoshi, 2018 .

A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices

Daisuke Ueda, Takeshi Fukuda, Tsuyoshi Tanaka, 2012, 2012 IEEE International Solid-State Circuits Conference.

GaN-on-Si Power Technology: Devices and Applications

Alex Lidow, Tetsuzo Ueda, Oliver Häberlen, 2017, IEEE Transactions on Electron Devices.

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Satoshi Tamura, Daisuke Ueda, Yoshiharu Anda, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

An Ultra Compact GaN 3x3 Matrix Converter

Yasuhiro Yamada, Yuji Kudoh, Tetsuzo Ueda, 2014 .

Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Recent advances of high voltage AlGaN/GaN power HFETs

Daisuke Ueda, Tsuyoshi Tanaka, Tetsuzo Ueda, 2009, OPTO.

Calculation of Unstable Mixing Region In Wurtzite InGaN

James S. Harris, Masaaki Yuri, Toru Takayama, 1998 .

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Tetsuzo Ueda, Shinji Ujita, Hidekazu Umeda, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection

Tetsuzo Ueda, Yasufumi Kawai, Shinji Ujita, 2010 .

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal

Masaaki Yuri, Daisuke Ueda, Tetsuzo Ueda, 2004 .

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, 2017 .

A 26GHz Transceiver Chipset for Short Range Radar using Post-Passivation Interconnection

Tetsuzo Ueda, Yasufumi Kawai, Shinji Ujita, 2010 .

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Kaoru Inoue, Hidetoshi Ishida, Tetsuzo Ueda, 2010, IEEE Transactions on Electron Devices.

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Fumito Kusama, Yusuke Kinoshita, Hidetoshi Ishida, 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Daisuke Ueda, Masahiro Hikita, Tetsuzo Ueda, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Recent Advances in GaN Power Switching Devices

Daisuke Ueda, Yoshiharu Anda, Tetsuzo Ueda, 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Tetsuzo Ueda, Masahiro Ishida, Tsuguyasu Hatsuda, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Daisuke Ueda, Yoshiharu Anda, Tetsuzo Ueda, 2010, 2010 International Electron Devices Meeting.

AlGaN/GaN MIS‐HEMTs with HfO2 gate insulator

Yutaka Ohno, Koichi Maezawa, Takashi Mizutani, 2007 .

Reliability issues in GaN and SiC power devices

Tetsuzo Ueda, T. Ueda, 2014, 2014 IEEE International Reliability Physics Symposium.

GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors

Daisuke Ueda, Tetsuzo Ueda, Atsushi Noma, 1995 .

Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Hidetoshi Ishida, Tetsuzo Ueda, Hidekazu Umeda, 2016 .

Crystalline SiNx Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition

Satoshi Nakazawa, Tetsuzo Ueda, Toshiyuki Takizawa, 2008 .

Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Tetsuzo Ueda, Masahiro Ishida, T. Ueda, 2013 .

Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Satoshi Nakazawa, Tetsuzo Ueda, Tamotsu Hashizume, 2007 .

Highly efficient GaN power transistors and integrated circuits with high breakdown voltages

Daisuke Ueda, Tetsuzo Ueda, Tsuyoshi Tanaka, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Hidetoshi Ishida, Masahiro Hikita, Tetsuzo Ueda, 2015 .

Fundamental Investigation of Isolated DC-DC Converter with Class-Φ2 Inverter

Yushi Miura, Toshifumi Ise, Tetsuzo Ueda, 2017 .

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

Ryutaro Futakuchi, Daisuke Ueda, Hidetoshi Ishida, 2014, IEEE Journal of Photovoltaics.

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications

Tetsuzo Ueda, Eiji Fujii, Atsushi Ohoka, 2014 .

Single to two-phase matrix converter using GaN-based monolithic bidirectional switch for driving symmetrical two-phase motor

Toshimitsu Morizane, Daisuke Ueda, Yuji Kudoh, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

Daisuke Ueda, Tetsuzo Ueda, Yasuhiro Uemoto, 2009 .

Current status on GaN-based RF-power devices

Daisuke Ueda, Tetsuzo Ueda, Tsuyoshi Tanaka, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Daisuke Ueda, Hiroshi Takenaka, Tetsuzo Ueda, 1997 .

99.3% efficiency of boost-up converter for totem-pole bridgeless PFC using GaN gate injection transistors

Tetsuzo Ueda, Tatsuo Morita, Shinji Ujita, 2014 .

Recent advances and future prospects on GaN-based power devices

Tetsuzo Ueda, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

Highly Efficient Low-Voltage DC-DC Converter at 2-5 MHz with High Operating Current Using GaN Gate Injection Transistors

Yusuke Kinoshita, Tetsuzo Ueda, Tatsuo Morita, 2014 .

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Takahiro Yamada, Satoshi Nakazawa, Tetsuzo Ueda, 2016 .

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

Takashi Mizutani, Tetsuzo Ueda, Shigeru Kishimoto, 2010 .

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Gaudenzio Meneghesso, Enrico Zanoni, Hidetoshi Ishida, 2014 .

Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs

Tetsuzo Ueda, Masahiro Ishida, Tsuneo Tanaka, 2012 .

Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Masaaki Yuri, Tetsuzo Ueda, Masahiro Ishida, 2011 .

Recent advances in GaN transistors for future emerging applications

Daisuke Ueda, Tetsuzo Ueda, Manabu Yanagihara, 2009 .

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Hidetoshi Ishida, Tetsuzo Ueda, Masayuki Kuroda, 2007 .

GaN transistors on Si for switching and high-frequency applications

Daisuke Ueda, Tetsuzo Ueda, Masahiro Ishida, 2014 .