B. Nelson

发表

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition

Hitoe Habuchi, Keda Wang, Brent P. Nelson, 2003 .

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

J. E. Young, B. Nelson, S. Dexheimer, 2002 .

Studying early time HWCVD growth of a-Si:H by real time spectroscopic ellipsometry

R. Reedy, D. Levi, B. Nelson, 2003 .

Fermi-level dependence of the charge state of diffusing hydrogen in amorphous silicon

R. Reedy, R. Crandall, H. Branz, 2002 .

In-situ studies of the growth of amorphous and nanocrystalline silicon using real time spectroscopic ellipsometry

D. Levi, C. Teplin, B. Nelson, 2004 .

Photovoltaics Informatics: Harnessing Energy Science via Data-Driven Approaches

David J. Biagioni, M. Contreras, S. Glynn, 2012 .

Deposition of Device Quality μc-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime where W/Si Formation is Minimal

B. Yan, D. L. Williamson, A. Mahan, 2003 .

Internal Friction of Amorphous and Nanocrystalline Silicon at Low Temperatures

Xiao Liu, R. Crandall, R. Pohl, 2006 .

Devices Fabrication with Narrow-Bandgap a-SiGe:H Alloys Deposited by HWCVD

R. Reedy, H. Branz, B. Yan, 2004 .

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

R. Reedy, L. Gedvilas, B. Nelson, 2003 .

Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s

R. Crandall, Y. Xu, A. Gallagher, 2001 .

Anisotropy in Hydrogenated Amorphous Silicon Films as Observed Using Polarized FTIR-ATR Spectroscopy

R. Reedy, R. Crandall, L. Gedvilas, 1999 .

Safety analysis report for the use of hazardous production materials in photovoltaic applications at the National Renewable Energy Laboratory. Volume 2, Appendices

Vasilis Fthenakis, Paul D. Moskowitz, Brent P. Nelson, 1992 .

Microvoids in amorphous Si1-xCx: H alloys studied by small-angle x-ray scattering

R. Crandall, D. L. Williamson, A. Mahan, 1989 .

Techniques for measuring the composition of hydrogenated amorphous silicon–germanium alloys

R. Reedy, W. Lanford, L. Gedvilas, 1999 .

The observation of microvoids in device quality hydrogenated amorphous silicon

R. Crandall, D. L. Williamson, A. Mahan, 1989 .

Small-angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:H

R. Crandall, D. L. Williamson, A. Mahan, 1989 .

New Results on Enhanced Deuterium Diffusion Under Illumination in Amorphous Silicon

S. Asher, H. Branz, B. Nelson, 1992 .

On equilibration processes in GD amorphous silicon, prepared at high substrate temperatures

M. Vaněček, R. Crandall, A. Mahan, 1991 .

Transport properties of intrinsic hydrogenated amorphous silicon produced by the hot-wire technique investigated by the photomixing technique

R. Crandall, Yi Tang, A. Mahan, 1997 .

Deposition of Device Quality, Low H Content a-Si:H by the Hot Wire Technique

R. Crandall, A. Mahan, B. Nelson, 1991 .

Films and Devices Deposited by Hwcvd at Ultra High Deposition Rates

M. Vaněček, Y. Xu, L. Gedvilas, 2001 .

Small angle X-ray scattering from microvoids in the a-SiC:H alloy

R. Crandall, D. L. Williamson, A. Mahan, 1989 .

Narrow gap a-SiGe:H grown by hot-wire chemical vapor deposition

Y. Xu, D. L. Williamson, Daxing Han, 2003 .

High-deposition rate a-Si:H n–i–p solar cells grown by HWCVD

R. Crandall, H. Branz, Qi Wang, 2001 .

Small-angle neutron scattering studies of hot-wire CVD a-Si:H

D. Marr, D. L. Williamson, B. Nelson, 2003 .

Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

S. K. Deb, Sehee Lee, H. Cheong, 2000 .

Efficient high-deposition-rate all-hot-wire hydrogenated amorphous silicon n-i-p solar cells

R. Crandall, H. Branz, Qi Wang, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition

R. Crandall, H. Branz, Qi Wang, 2000 .

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

Qi Wang, A. Mahan, B. Nelson, 1999 .

H-Out-Diffusion and Device Performance In n-i-p Solar Cells Utilizing High Temperature Hot Wire a si: H i-Layers

R. Reedy, S. Guha, R. Crandall, 1998 .

Electronic properties of hydrogenated amorphous silicon-germanium alloys and long-range potential fluctuations

K. Bärner, B. Nelson, B. Roedern, 2002 .

Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD at Deposition Rates up to 1 µm/minute

D. L. Williamson, A. Mahan, B. Nelson, 2000 .

Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique

R. Reedy, A. Gallagher, D. L. Williamson, 1998 .

How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition

B. To, K. Jones, Y. Xu, 2006 .

Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H

I. Balberg, R. Crandall, Y. Xu, 1991 .

Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD

J. Owens, L. Gedvilas, Daxing Han, 2002 .

Ultrafast Dynamics of Photoexcitations in HWCVD Hydrogenated Amorphous Silicon Alloys

J. E. Young, B. Nelson, S. Dexheimer, 2000 .

Deposition of device quality, low H content amorphous silicon

Isaac Balberg, Brent P. Nelson, Richard S. Crandall, 1991 .

Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 /s

L. Gedvilas, A. Mahan, B. Nelson, 2001 .

Amorphous silicon films and solar cells deposited by HWCVD at ultra-high deposition rates

Brent P. Nelson, A. H. Mahan, Y. Xu, 2002 .

The Influence of W Filament Alloying on the Electronic Properties of Hwcvd Deposited a-Si:H Films

A. Gallagher, A. Mahan, B. Nelson, 2000 .

Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition

K. Jones, Y. Xu, M. Al‐Jassim, 2003 .

Physical properties of HWCVD microcrystalline silicon thin films

Y. Xu, M. Al‐Jassim, K. Jones, 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

B. To, K. Jones, Y. Xu, 2003 .

Microvoids and Photoconductivities in a-SiC:H and a-Si:H

A. Mahan, B. Nelson, D. Williamson, 1989 .

Evidence for light-induced long-range hydrogen motion in a-Si:H using Raman scattering of a-WO3

S. K. Deb, Sehee Lee, H. Cheong, 2001 .

Photoconductivity Stability Improvement in Hydrogenated Amorphous Silicon by Ultraviolet Illumination

R. Crandall, H. Branz, Wei Gao, 2002 .

Evidence for Long-range Hydrogen Motion in a-Si:H under Room-temperature Illumination Using Raman Scattering of Amorphous Tungsten Oxide Overlayer

S. K. Deb, Sehee Lee, H. Cheong, 2001 .

The Influence of Electrons From the Filament on the Material Properties of Hydrogenated Amorphous Silicon Grown by the Hot-Wire Chemical Vapor Deposition Technique

R. Crandall, Qi Wang, A. Mahan, 1998 .

Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

B. Nelson, A. Nampoothiri, S. Dexheimer, 2003 .

Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

D. Kwon, B. Nelson, J. D. Cohen, 1995 .