P. Danesh

发表

Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane

B. Schmidt, J. Baran, P. Danesh, 2004 .

Effect of film thickness on hydrogen content in a-Si : H

B. Schmidt, J. Baran, P. Danesh, 2003 .

Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

B. Schmidt, P. Danesh, B. Pantchev, 2002 .

Depth distributions of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane

B. Schmidt, P. Danesh, B. Pantchev, 2001 .

Mechanical stress in thin a-Si:H films

P. Danesh, B. Pantchev, 2000 .

Effect of Post-Hydrogenation on the Structural Properties of Amorphous Silicon Network

B. Schmidt, Jan F. Schmidt, P. Danesh, 2004 .

Hydrogen solubility limit in hydrogenated amorphous silicon

B. Schmidt, P. Danesh, B. Pantchev, 2004 .

Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition

P. Danesh, E. Liarokapis, A. Toneva, 1996 .

Structural peculiarities in high-dose Ar+ implanted silicon

G. Balossier, P. Danesh, M. Kalitzova, 1985 .

Effect of hydrogen on hardness of amorphous silicon

B. Schmidt, J. Wiezorek, P. Danesh, 2011 .

Nanoindentation-induced pile-up in hydrogenated amorphous silicon

B. Schmidt, J. Wiezorek, P. Danesh, 2010 .

a-Si:H film on side-polished fiber as optical polarizer and narrow-band filter

B. Zafirova, E. Karakoleva, P. Danesh, 1998 .

RF plasma treatment of porous silicon

P. Danesh, L. Bedikjan, 1997 .

Mechanical stress in structures formed by thermal oxidation of amorphous and crystalline silicon

A. Szekeres, P. Danesh, 1996 .

Oxidation of a-Si:H stress behaviour in the grown oxide

A. Szekeres, P. Danesh, K. Christova, 1993 .

Oxidation of amorphous and crystalline silicon

A. Szekeres, P. Danesh, 1995 .

Hydrogenated amorphous silicon on soda-lime glass substrate: Correlation between sodium contamination and porosity of the films

P. Danesh, B. Pantchev, 1995 .

Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures

B. Schmidt, L. Bischoff, P. Danesh, 2010 .

Ion beam-induced hydrogen migration in a SiO2/a-Si:H/SiO2 layer stack

B. Schmidt, W. Möller, P. Danesh, 2009 .

Hydrogen passivation of the implantation defects in MOS structures

P. Danesh, S. Kaschieva, 1984 .

Infrared absorption strengths of ion-implanted hydrogenated amorphous silicon

B. Schmidt, P. Danesh, B. Pantchev, 2008 .

Electrical properties of hydrogen-rich SiSiO2 structures

A. Szekeres, P. Danesh, 1995 .

Structural order in a-Si:H:Cl films

E. Anastassakis, P. Danesh, E. Liarokapis, 1987 .

Raman Scattering in Glow Discharge Si:H:Cl Films

Georgiev, P. Danesh, I. Savatinova, 1986, November 16.

Bias-enhanced conductance in hydrogenated amorphous silicon films

P. Danesh, D. And, 1991 .

Microstructure and optical properties in CVD a-Si:H films

P. Danesh, B. Pantchev, A. Toneva, 1990 .

Dry etching of crystalline quartz in a planar plasma reactor

P. Danesh, B. Pantchev, 1982 .

RF annealing of the implantation‐induced defects in silicon using hydrogen plasma

P. Danesh, A. Dyakov, S. Kashchieva, 1984 .

a-Si:H thin film microstructure influenced by HOMOCVD-process parameters

P. Danesh, B. Pantchev, A. Toneva, 1993 .

Short-range order and microstructure in hydrogenated amorphous silicon

P. Danesh, B. Pantchev, E. Liarokapis, 1991 .

Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane

A. Belov, P. Danesh, B. Pantchev, 2002 .

Amorphous to crystalline state conversion in deposited silicon layers

P. Danesh, B. Pantchev, K. Kirov, 1981 .

A refractometric sensor using index-sensitive mode resonance between single-mode fiber and thin film amorphous silicon waveguide

E. I. Karakoleva, E. Alipieva, Andrey Andreev, 2005 .

Dependence of glow discharge Si:H:Cl film morphology on diluent gas and SiCl4 partial pressure

P. Danesh, B. Pantchev, M. Rossi, 1988 .

Thermal regrowth of silicon after high-dose Ar+ implantation

G. Balossier, P. Danesh, M. Kalitzova, 1986 .

Oxidation of a-Si:H (SiSiO2 interface properties)

A. Szekeres, P. Danesh, S. Kaschieva, 1995 .

Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

B. Schmidt, J. Wiezorek, P. Danesh, 2010 .

SHG and AFM study of PECVD a-Si:H films

S. Alexandrova, I. Maslyanitsyn, P. Danesh, 2002 .

Post-deposition oxygen plasma treatment of a-Si:H

P. Danesh, 1991 .

Field-assisted ion exchange for the detection of localized defects in thin films on glass substrates

P. Danesh, B. Pantchev, 1988 .

Revelation of micropores in a-Si:H films

P. Danesh, B. Pantchev, 1988 .

Second harmonic generation in hydrogenated amorphous silicon

S. Alexandrova, I. Maslyanitsyn, P. Danesh, 2000 .

Hydrogen as origin of compressive intrinsic stress in hydrogenated amorphous silicon: The contribution of clustered forms

B. Schmidt, P. Danesh, B. Pantchev, 2005 .

The relationship between the film properties and the preparation conditions for a-Si:H grown by homogeneous chemical vapour deposition

P. Danesh, B. Pantchev, A. Toneva, 1994 .

Nanoindentation of hydrogenated amorphous silicon

P. Danesh, B. Pantchev, J. Wiezorek, 2010 .

18 MeV electron irradiation-induced metastability in hydrogenated amorphous silicon

E. Vlaikova, P. Danesh, B. Pantchev, 2005 .

Elastic recoil detection analysis of ion-exchanged soda-lime glass substrates for a-Si:H devices

B. Schmidt, U. Kreissig, P. Danesh, 2002 .

Surface relief of crystalline quartz etched in a planar plasma reactor

P. Danesh, B. Pantchev, M. Mikhailov, 1983 .