A. Gelatos

发表

Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

J. Cohen, C. Michelson, A. Gelatos, 1985 .

Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?

Jerzy Kanicki, J. Kanicki, A. Gelatos, 1990 .

Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces : top nitride and bottom nitride configurations in MNS and TFT devices

J. Kanicki, C. Godet, A. Gelatos, 1992 .

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

J. Kanicki, C. Godet, A. Gelatos, 1991 .

A high performance 1.8 V, 0.20 /spl mu/m CMOS technology with copper metallization

S. Das, T. Lii, M. Angyal, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The Properties of a Plasma Deposited Candidate Insulator for Future Multilevel Interconnects Technology.

A. Gelatos, N. Parikh, N. Saha, 1992 .

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

J. Kanicki, A. Gelatos, M. S. Crowder, 1990 .

Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films

J. Kanicki, A. Gelatos, D. Jousse, 1989 .

Direct observation of the silicon nitride on amorphous silicon interface states

J. Kanicki, A. Gelatos, 1990 .

Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface

J. Kanicki, A. Gelatos, 1989 .

Photocapacitance Studies Of Light Induced Changes in the Density of Gap States of N-Type Doped and Undoped Hydrogenated Amorphous Silicon Films

A. Gelatos, J. D. Cohen, 1988 .

Capacitance Studies of Metastable States in Light-Soaked, Quench-Cooled, and Bias-Annealed N-Type Hydrogenated Amorphous Silicon

A. Gelatos, J. D. Cohen, T. M. Leen, 1990 .

Effect of NH3 thermal treatment on an atomic layer deposited on tungsten films and formation of W–B–N

Hyoungsub Kim, R. Jackson, Sang-Yun Lee, 2003 .

Chemical Vapor Deposition of Copper for Advanced On-Chip Interconnects

A. Gelatos, A. Jain, C. Mogab, 1994 .

Correlation of optical and thermal emission processes for bound‐to‐free transitions from mobility gap states in doped hydrogenerated amorphous silicon

J. Harbison, A. Gelatos, J. D. Cohen, 2008 .

Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods

T. Unold, C. Fortmann, A. Gelatos, 1992 .

Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water

Ajay Jain, M. Hampden‐Smith, T. Kodas, 1995 .

The effects of reactive precleaning (RPC+) on the formation of titanium silicide by PECVD TiCl/sub 4/-Ti deposition, and its thermal stability

Feng Wu, A. Gelatos, J. Kopp, 2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).

Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon

S. Mohney, S. Chopra, A. Agrawal, 2013, Symposium on VLSI Technology.

Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

J. Harbison, A. Gelatos, J. D. Cohen, 1986 .

Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor

R. Marsh, C. J. Mogab, A. Gelatos, 1993 .

Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon

K. Zellama, K. Zellama, A. Gelatos, 1988 .

Capacitance studies of optical and thermal transitions from mobility gap states in hydrogenated amorphous silicon

A. Gelatos, J. D. Cohen, 1987 .

Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon

J. Harbison, A. Gelatos, J. D. Cohen, 1988 .

The Role of Lattice Relaxation in the Competition Between Optical and Thermal Transitions from Gap States in Hydroacenated Amorphous Silicon

J. Harbison, A. Gelatos, J. D. Cohen, 1987 .

Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures

H. van Meer, J. Jordan-Sweet, W. Wang, 2017, 2017 Symposium on VLSI Technology.