D. Quang

发表

Electron mobility in Gaussian heavily doped ZnO surface quantum wells

N. Tien, D. Quang, L. Tuan, 2008 .

Electron scattering from roughness-induced fluctuations in the donor density in ZnO surface quantum wells

N. Tien, D. Quang, L. Tuan, 2010 .

EFFECT OF IMPURITY CORRELATION IN HEAVILY MODULATION-DOPED QUANTUM WIRES

D. Quang, N. Tung, Trail Doan Huan, 2000 .

On the theory of the complex dielectric function of a heavily doped degenerate semiconductor

B. Esser, D. Quang, R. Keiper, 1979 .

Key scattering mechanisms for holes in strained SiGe/Ge/SiGe square quantum wells

D. Quang, N. H. Tung, Tran Thi Hai, 2008 .

Effect of Single-Side Modulation Doping on Low-Temperature Transport Properties in Square Infinite Quantum Wells

D. Quang, N. H. Tung, Do Thi Hien, 2009 .

On the electron mobility in slightly compensated heavily doped GaAs at low temperatures

D. Quang, N. N. Dat, D. V. An, 1993 .

Low-temperature mobility of holes in Si/SiGe p -channel heterostructures

T. D. Huan, D. Quang, Vu Ngoc Tuoc, 2004 .

Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells

T. D. Huan, D. Quang, Vu Ngoc Tuoc, 2003 .

One-Sample based Single-Valued Estimation of the Interface Profile from Intersubband Integrated Absorption Intensity Data

N. Tien, D. N. Thao, D. Quang, 2016 .

Density of states of a two-dimensional electron gas in a perpendicular magnetic field and a random field of arbitrary correlation

F. Bechstedt, D. Quang, S. Glutsch, 2003 .

Analytic Solution for the Density of States of the Disordered Quasi-One-Dimensional Electron Gas in a Quantum Wire

D. Quang, N. H. Tung, 2001 .

Deep Tail in the Density of States of a Disordered Two-Dimensional Electron Gas

D. Quang, N. H. Tung, 1998 .

A Semiclassical Approach to the Electron Gas in Two-Dimensional Semiconductor Structures

D. Quang, N. H. Tung, 1998 .

Auger Recombination in an Intense Piezoelectric Noise Field

D. Quang, 1990 .

On the theory of Auger recombination in disordered semiconductors: a Green's function approach

D. Quang, 1989 .

Electron scattering from polarization charges bound on a rough interface of polar heterostructures

N. Tien, D. Quang, N. H. Tung, 2011 .

Auger Recombination in Heavily Doped Semiconductors

D. Quang, 1990 .

Quantum and transport lifetimes due to roughness-induced scattering of a two-dimensional electron gas in wurtzite group-III-nitride heterostructures

D. Quang, Vu Ngoc Tuoc, N. H. Tung, 2006 .

Roughness-induced mechanisms for electron scattering in wurtzite group-III-nitride heterostructures

D. Quang, Vu Ngoc Tuoc, N. H. Tung, 2005 .

Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction

Pham Thi Bich Thao, N. Tien, D. N. Thao, 2016 .

Electron distribution in polar heterojunctions within a realistic model

Pham Thi Bich Thao, N. Tien, D. N. Thao, 2015 .

Single-valued estimation of the interface profile from intersubband absorption linewidth data

N. Tien, D. N. Thao, D. Quang, 2012 .

On the Theory of Electroreflectance of Heavily Doped Degenerate Semiconductors

D. Quang, 1979 .

Theory of the channel-width dependence of the low-temperature hole mobility in Ge-rich narrow square Si ∕ SiGe ∕ Si quantum wells

D. Quang, N. H. Tung, Huynh Anh Huy, 2007 .

Effect of Impurity Correlation on the Density of States in Slightly Compensated Heavily Doped Semiconductors

D. Quang, N. N. Dat, D. V. An, 1993 .

On the Theory of Auger Recombination in Slightly Compensated Heavily Doped Semiconductors

D. Quang, 1991 .

On the theory of resonance Raman scattering in heavily doped degenerate semiconductors

Ronald R. Keiper, B. Esser, D. Quang, 1981 .

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

D. Quang, N. H. Tung, Tran Thi Hai, 2011 .

Random piezoelectric field in real [001]-oriented strain-relaxed semiconductor heterostructures.

T. D. Huan, D. Quang, Vu Ngoc Tuoc, 2002, Physical review letters.