Seiyon Kim

Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates.

John A Rogers, Etienne Menard, Ilesanmi Adesida, 2006, Small.

0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure

I. Adesida, Seiyon Kim, 2006, IEEE Electron Device Letters.

Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Metallization

I. Adesida, Jae‐Hyung Jang, Seiyon Kim, 2005 .

Reaction Mechanism and Film Properties of the Atomic Layer Deposition of ZrO2 Thin Films with a Heteroleptic CpZr(N(CH3)2)3 Precursor

I. Oh, Seiyon Kim, Seunggi Seo, 2023, Applied Surface Science.

The ultimate CMOS device and beyond

M. D. Giles, I. Young, K. J. Kuhn, 2012, 2012 International Electron Devices Meeting.

First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

K. Hoya, T. Nagase, M. Na, 2022, International Electron Devices Meeting.