P. Murugapandiyan

发表

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

S. Ravimaran, J. William, P. Murugapandiyan, 2017 .

UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

P. Murugapandiyan, S. Baskaran, C. Sivamani, 2022, Silicon.

N / GaN HEMT on SiC substrates for high power RF applications

S. Ravimaran, P. Murugapandiyan, J. William, 2017 .

GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review

V. Lakshmi, P. Eswaran, P. Murugapandiyan, 2020 .

Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

P. Murugapandiyan, Mohammed Wasim, V. Rajya Lakshmi, 2020, International Journal of Electronics Letters.

Design and Analysis of 20 nm T-Gate AlN/GaN HEMT with InGaN back- barrier for High power Microwave Applications

P. Murugapandiyan, Laxmikant Bordekar, Shrinivas S. Joshi, 2018 .

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

S. Ravimaran, P. Murugapandiyan, J. William, 2017 .

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

D. Nirmal, J. Ajayan, S. Ravimaran, 2017 .

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

S. Ravimaran, P. Murugapandiyan, J. William, 2017 .

Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

S. Ravimaran, P. Murugapandiyan, J. William, 2017 .

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, Silicon.

Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

D. J. Thiruvadigal, P. Murugapandiyan, Y. Tarauni, 2022, Journal of Electronic Materials.

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, Silicon.

D. J. Thiruvadigal, P. Murugapandiyan, Y. Tarauni, 2022, Journal of Electronic Materials.

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

D. Nirmal, J. Ajayan, Arathy Varghese, 2021, Materials Science and Engineering: B.

Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

V. Lakshmi, P. Murugapandiyan, Mohammed Wasim, 2019, Journal of Electronic Materials.

Ternary Gan Based HEMT for High Frequency Application

P. Murugapandiyan, V. S. Mary, 2015, International journal of advance research and innovation.

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

V. N. Ramakrishnan, Arathy Varghese, V. Lakshmi, 2020, Journal of Science: Advanced Materials and Devices.

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, A. S. Augustine Fletcher, 2021, Microelectron. J..

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

D. Nirmal, J. Ajayan, Arathy Varghese, 2021, Silicon.

Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

D. Nirmal, J. Ajayan, M. Hasan, 2020 .

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

D. Nirmal, J. Ajayan, L. Arivazhagan, 2022, Journal of Electronic Materials.

Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

Ramkumar Natarajan, P. Murugapandiyan, Eswaran Parthasarathy, 2022, Silicon.

A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

S. R. Kalva, P. Murugapandiyan, Y. Tarauni, 2023, Micro and Nanostructures.

Ultra‐wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications

Ramkumar Natarajan, P. Murugapandiyan, E. Parthasarathy, 2022 .

Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel

Ramkumar Natarajan, P. Murugapandiyan, E. Parthasarathy, 2022, International Journal of RF and Microwave Computer-Aided Engineering.