T. Umeda

发表

A silicon carbide room-temperature single-photon source.

T. Ohshima, Á. Gali, B. Johnson, 2013, Nature materials.

Negative-U system of carbon vacancy in 4H-SiC.

E Janzén, E. Janzén, N. T. Son, 2012, Physical review letters.

A room temperature single photon source in silicon carbide

T. Umeda, S. Castelletto, T. Ohshima, 2013, CLEO: 2013.

Identification of the carbon antisite-vacancy pair in 4H-SiC.

E. Janzén, N. T. Son, T. Ohshima, 2006, Physical review letters.

Fabrication of single photon centres in silicon carbide

T. Ohshima, S. Castelletto, B. C. Johnson, 2012, COMMAD 2012.

Picosecond HEMT Photodetector: Improvement of Response Speed at Low Temperatures

T. Umeda, Y. Cho, H. Tanaka, 1988 .

EPR and ENDOR Studies of Shallow Donors in SiC

A. Henry, E. Janzén, I. Ivanov, 2010 .

Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR

T. Ohshima, S. Yamasaki, J. Isoya, 2005 .

Electron paramagnetic resonance study of the HEI 4 / SI 5 center in 4 H-SiC

E. Janzén, N. T. Son, T. Ohshima, 2006 .

Extending spin coherence times of diamond qubits by high-temperature annealing

M. Markham, D. Twitchen, T. Ohshima, 2013, 1309.4316.

The RBC-Bielefeld Collaboration

C. Jung, P. Petreczky, N. Christ, 2009 .

Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond

T. Umeda, T. Umeda, F. Jelezko, 2012, 1206.4260.

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC

A. Henry, E. Janzén, N. T. Son, 2006 .

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3 C-, 4 H-, and 6 H-SiC

A. Henry, N. T. Son, M. Katagiri, 2006 .

A web-based database for EPR centers in semiconductors

Norikazu Mizuochi, Takahide Umeda, S. Hagiwara, 2006 .

Ultrafast Chaos from Semiconductor Lasers

M. Miwa, T. Umeda, Y. Cho, 1986 .