S. Shabde

Mechanism of degradation of LDD MOSFETs due to hot-electron stress

A. Bhattacharyya, A. Bhattacharyya, S. Shabde, 1988 .

The buried-source VMOS dynamic RAM device

J. Barnes, S. Shabde, F. Jenne, 1977, 1977 International Electron Devices Meeting.

The temperature dependence of the low field Nernst coefficient in Bi and Bi-Sb alloys☆

G. C. Jain, S. Shabde, 1967 .

Ionization Rates in (AlxGa1−x)As

C. Yeh, S. Shabde, S. N. Shabde, 1970 .

Temperature dependence of ionization rates in AlxGa1-xAs

C. Yeh, S. Shabde, 1971 .

Channel-width dependence of the punchthrough characteristics in n-channel MOSFETS

S. Shabde, 1985 .

Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation

Richard S. Muller, R. Muller, A. Bhattacharyya, 1988 .