M. Ryu

发表

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Jang-Yeon Kwon, Sang Yoon Lee, Rino Choi, 2010 .

The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2

Ki-Bum Kim, M. Ryu, Seokjin Hwang, 1997 .

42.4L: Late‐News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3‐In2O3‐ZnO) TFT

J. Kwon, M. Ryu, J. Jung, 2008 .

The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination

Sang Yoon Lee, Kyoung Seok Son, Joonsuk Park, 2011 .

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

Jae Kyeong Jeong, Sangyoon Lee, Y. Mo, 2013 .

Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current

Ji Sim Jung, Kyoung Seok Son, Sangyoon Lee, 2009 .

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

Jae Kyeong Jeong, Sangyoon Lee, R. Choi, 2012 .

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

Jung Woo Kim, Jong Min Kim, Sang Yoon Lee, 2008, IEEE Electron Device Letters.

High-Performance and Stable Transparent Hf–In–Zn–O Thin-Film Transistors With a Double-Etch-Stopper Layer

Sangyoon Lee, Joonsuk Park, Hyun-Suk Kim, 2010, IEEE Electron Device Letters.

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Sang Yoon Lee, Kyung-Bae Park, Gun Hee Kim, 2010 .

Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

Dong Lim Kim, Hyun Jae Kim, Sang Yoon Lee, 2011 .

Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays

Sang Yoon Lee, Sang Yoon Lee, M. Ryu, 2010 .

The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination

Joonki Suh, Joonsuk Park, Sang Yoon Lee, 2010 .

35.2: High‐Performance Solution‐Processed Oxide TFT with Dual Channel at Low Temperature

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2011 .

Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2011, IEEE Electron Device Letters.

High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

Gun Hee Kim, Kyung-Bae Park, Hyun Jae Kim, 2010, IEEE Electron Device Letters.

Solid Phase Crystallization (SPC) Behavior of Amorphous Si Bilayer Films with Different Concentration of Oxygen: Surface vs. Interface-nucleation

Ki-Bum Kim, J. Kwon, M. Ryu, 2000 .

Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Eunha Lee, Joonsuk Park, Sang Yoon Lee, 2010 .

Solution‐processed oxide thin‐film transistors using aluminum and nitrate precursors for low‐temperature annealing

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2011 .

Solid phase crystallization of amorphous Si1−xGex films deposited on SiO2 by molecular beam epitaxy

Ki-Bum Kim, Seung-Chang Lee, M. Ryu, 1995 .

Crystallization Behavior of the Amorphous Si 1-x Ge x Films Deposited on SiO 2 by Molecular Beam Epitaxy(MBE)

Chang Soo Kim, Ki-Bum Kim, Seung-Chang Lee, 1994 .

Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

Sangyoon Lee, Sang Yoon Lee, J. Kwon, 2007 .

Solid-Phase Crystallization of Amorphous Si 0.7 Ge 0.3 /Si and Si/Si 0.7 Ge 0.3 Bilayer Films on SiO 2

Ki-Bum Kim, Jin Woon Kim, M. Ryu, 1996 .

Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Hyun Jae Kim, Sangyoon Lee, H. Shin, 2010 .

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Chi-Sun Hwang, Shinhyuk Yang, Yeon-Gon Mo, 2010, IEEE Electron Device Letters.

The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination

Joonsuk Park, Sang Yoon Lee, Hyun-Suk Kim, 2010 .

Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Jae Kyeong Jeong, Sangyoon Lee, Joonsuk Park, 2013 .

High performance amorphous oxide thin film transistors with self-aligned top-gate structure

Y. S. Park, U. Chung, J. Hur, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Study on the Existence of Abnormal Hysteresis in Hf-In-Zn-O Thin Film Transistors under Illumination

Jeong Hwan Kim, C. Hwang, Sangyoon Lee, 2011 .

Stability Improvement of Gallium Indium Zinc Oxide Thin Film Transistors by Post-Thermal Annealing

Sangyoon Lee, Jong Min Kim, J. Kwon, 2008 .

Effects of carrier concentration in the back and front channels of Hf-In-Zn-O thin film transistors

Sangyoon Lee, Joonsuk Park, Hyun-Suk Kim, 2011 .

15.3: AMOLED Driven by Solution‐Processed Oxide Semiconductor TFT

Sang Yoon Lee, I. Kee, M. Ryu, 2009 .

Chapter 3: Enhancement of Crystallization of Hydrogenated Amorphous Silicon by A

H. Fritzsche, O. Awadelkarim, J. Sturm, 2022 .

High Performance and Stability of Double-Gate Hf–In–Zn–O Thin-Film Transistors Under Illumination

Joonsuk Park, Hyun-Suk Kim, J. Kwon, 2010, IEEE Electron Device Letters.

4 Inch QVGA AMOLED display driven by GaInZnO TFT

Y. S. Park, Jung Woo Kim, Sangyoon Lee, 2007 .

Device Characteristics of Polycrystalline Si0.84Ge0.16 Thin Film Transistors Grown from Si2H6 and GeH4 Source Gases

Ki-Bum Kim, M. Han, B. Bae, 1996 .

A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si0.7Ge0.3/Si) and a-(Si/Si0.7Ge0.3) Bilayer Films; Interface versus Surface Nucleated Films

Ki-Bum Kim, M. Ryu, Tae-Hoon Kim, 1998 .

Effects of Germanium on Grain size and surface roughness of the solid phase crystallized polycrystalline Si 1−x Ge x films

Ki-Bum Kim, Jin Woon Kim, Sang-joo Kim, 1996 .