Pierre Noe

Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices

Mathieu Bernard, Veronique Sousa, Gabriele Navarro, 2017, 2017 IEEE International Memory Workshop (IMW).

OTS selector devices: Material engineering for switching performance

Gabriele Navarro, Mathieu Bernard, Anthonin Verdy, 2018, 2018 International Conference on IC Design & Technology (ICICDT).

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption

Gilles Reimbold, P. Zuliani, G. Pananakakis, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Innovative GeS2/Sb2Te3 based phase change memory for low power applications

Julia Kluge, Serge Blonkowski, Gabriele Navarro, 2017, 2017 17th Non-Volatile Memory Technology Symposium (NVMTS).

Room temperature operation of Er-doped silicon-rich oxide microcavities supporting high-Q whispering-gallery modes

Pierre Benech, Alain Morand, Pierre Noe, 2005, SPIE Optics + Photonics.

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

Gabriele Navarro, Mathieu Bernard, Veronique Sousa, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Phase-Change Memory: Performance, Roles and Challenges

Jean Coignus, Nicolas Bernier, Gabriele Navarro, 2018, 2018 IEEE International Memory Workshop (IMW).