A. Romanowski

发表

The measurement of the diffusion length and the recombination velocity at the grain boundary in polycrystalline solar cells by the SEM-EBIC technique

A. Romanowski, A. Buczkowski, 1985 .

Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

G. Rozgonyi, A. Romanowski, M. Tamatsuka, 1999 .

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

G. Rozgonyi, Z. Radzimski, A. Romanowski, 1997 .

Electron‐beam‐induced current near the localized defects in a polycrystalline semiconductor

A. Romanowski, 1986 .

Characterization of and Ti Gettering for PV Substrates: Final Subcontract Report; 28 January 1998 - 28 August 2001

G. Rozgonyi, L. Kordas, A. Karoui, 2002 .

Frequency-resolved microwave reflection photoconductance

G. Rozgonyi, A. Karoui, A. Romanowski, 1998 .

The impact of the heat generation of the primary scanning beam on the SEM‐EBIC characteristics

A. Romanowski, 1985 .

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

G. Rozgonyi, H. Horie, A. Romanowski, 1999 .

Analysis of the short‐circuit current of a polycrystalline solar cell with excitation by a gated electron beam

A. Romanowski, D. B. Wittry, J. Tsaur, 1986 .

Determination of grain-boundary parameters of polycrystalline silicon by ac electron-beam-induced current

A. Romanowski, D. B. Wittry, 1988 .

Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current

A. Romanowski, D. B. Wittry, 1986 .