T. Nakanishi
发表
M. Yamaguchi,
Y. Tamura,
H. Minakata,
2003,
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Y. Tsunashima,
K. Suguro,
T. Nakanishi,
2001,
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
Y. Tamura,
T. Nakanishi,
M. Shigeno,
2000
.
Y. Sugita,
T. Nakanishi,
K. Takasaki,
1995
.
T. Nakanishi,
S. Komiya,
S. Ohkubo,
1997
.
Takashi Ito,
Y. Tamura,
T. Nakanishi,
1997
.
K. Abe,
Keiichi Yamamoto,
T. Nakanishi,
1983
.
T. Nakanishi,
A. Ohsawa,
R. Takizawa,
1987
.
Influence of Ni impurities at the Si‐SiO2 interface on the metal‐oxide‐semiconductor characteristics
Toshiro Nakanishi,
Kouichirou Honda,
T. Nakanishi,
1994
.
T. Nakanishi,
A. Ohsawa,
K. Honda,
1987
.
Y. Nara,
M. Fukuda,
Y. Nara,
2003,
IEEE International Electron Devices Meeting 2003.
Y. Sugita,
T. Nakanishi,
S. Ohkubo,
1996
.
Y. Nara,
M. Fukuda,
Y. Nara,
2003,
IEEE Electron Device Letters.
K. Hwang,
Seung-Hyun Lim,
T. Nakanishi,
2011,
2011 International Reliability Physics Symposium.
T. Aoyama,
Y. Sugita,
T. Nakanishi,
1997
.
Y. Tsunashima,
K. Suguro,
Tetsu Tanaka,
2002
.