Y. Canvel

发表

Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers

D. Tsvetanova, T. Ivanov, B. Govoreanu, 2021 .

Modification of Ge-rich GeSbTe surface during the patterning process of phase-change memories

S. Barnola, E. Martinez, S. Lagrasta, 2020 .

Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

B. Govoreanu, I. Radu, J. Swerts, 2022, 2211.16437.

Nanoscale domain wall devices with magnetic tunnel junction read and write

D. Tsvetanova, I. Radu, I. Young, 2021, Nature Electronics.

Low charge noise quantum dots with industrial CMOS manufacturing

B. Govoreanu, I. Radu, S. Kubicek, 2022, 2212.06464.

Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification

B. Govoreanu, I. Radu, J. Swerts, 2022, Materials for Quantum Technology.

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

T. Ivanov, L. Goux, B. Govoreanu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

All-electrical control of scaled spin logic devices based on domain wall motion

D. Tsvetanova, I. Radu, I. Young, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion

D. Tsvetanova, G. Kar, I. Radu, 2021, IEEE Transactions on Electron Devices.

Advanced CMOS manufacturing of superconducting qubits on 300 mm wafers

Y. Canvel, D. Vangoidsenhoven, M. Mongillo, 2024, Nature.

Magnetic domain walls: from physics to devices

D. Tsvetanova, N. Jossart, I. Radu, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

A. Laucht, F. Hudson, A. Dzurak, 2024, 2410.15590.