Y. Canvel

发表

Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers

D. Tsvetanova, T. Ivanov, B. Govoreanu, 2021 .

Modification of Ge-rich GeSbTe surface during the patterning process of phase-change memories

S. Barnola, E. Martinez, S. Lagrasta, 2020 .

Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

B. Govoreanu, I. Radu, J. Swerts, 2022, 2211.16437.

Nanoscale domain wall devices with magnetic tunnel junction read and write

D. Tsvetanova, I. Radu, I. Young, 2021, Nature Electronics.

Low charge noise quantum dots with industrial CMOS manufacturing

B. Govoreanu, I. Radu, S. Kubicek, 2022, 2212.06464.

Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

B. Govoreanu, I. Radu, J. Swerts, 2022, 2211.16437.

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

T. Ivanov, L. Goux, B. Govoreanu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

All-electrical control of scaled spin logic devices based on domain wall motion

D. Tsvetanova, I. Radu, I. Young, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion

D. Tsvetanova, G. Kar, I. Radu, 2021, IEEE Transactions on Electron Devices.

High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing

Y. Canvel, D. Vangoidsenhoven, M. Mongillo, 2024, 2403.01312.

Magnetic domain walls: from physics to devices

D. Tsvetanova, N. Jossart, I. Radu, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).