Lanlong Ji

The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions

J. Bi, K. Xi, Xueqin Yang, 2021, Applied Physics Express.

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

Ming Liu, Jinshun Bi, Sandip Majumdar, 2021, Sci. China Inf. Sci..

Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes

Ming Liu, J. Bi, K. Xi, 2018, Chinese Physics Letters.

Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM)

J. Bi, Mengli Liu, K. Xi, 2019, Microelectronics Reliability.

Study of total ionizing dose induced read bit errors in magneto-resistive random access memory

Jin Li, Haibin Wang, Jinshun Bi, 2016, Microelectron. Reliab..

Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing

J. Bi, Zhuangde Jiang, Sannian Song, 2022, Neuromorph. Comput. Eng..

The influences of radiation effects on DC/RF performances of L g = 22 nm gate-all-around nanosheet field-effect transistor

J. Bi, Biyao Zhao, Han-Pang Wang, 2022, Semiconductor Science and Technology.

Design of RRAM with high storage capacity and high reliability for IoT applications

J. Bi, K. Xi, Lanlong Ji, 2022, Solid-State Electronics.