Hyun-Seop Kim

发表

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Hyungtak Kim, H. Cha, C. Jang, 2022, Materials.

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

K. Seo, H. Cha, Hyun-Seop Kim, 2020, Materials.

Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

K. Seo, H. Cha, Jae-Gil Lee, 2015 .

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlOxNy gate insulator

K. Seo, H. Cha, Hyun-Seop Kim, 2019, Semiconductor Science and Technology.

Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

K. Seo, Hyungtak Kim, H. Cha, 2018, Vacuum.

Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer

K. Seo, H. Cha, Jae-Gil Lee, 2015 .

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

H. Cha, Sung-Hoon Park, Hyun-Seop Kim, 2016 .

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

H. Lee, S. M. Lee, Jungwoo Oh, 2017 .

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

K. Seo, H. Cha, Hyun-Seop Kim, 2020, Crystals.

High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors

K. Seo, H. Cha, Jae-Gil Lee, 2016 .

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

K. Seo, H. Cha, T. Jang, 2019, physica status solidi (a).

SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

K. Seo, Jungwoo Oh, H. Cha, 2018, Results in Physics.

Atomic-layer deposition of crystalline BeO on SiC

S. M. Lee, Jungwoo Oh, J. Yum, 2019, Applied Surface Science.

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Won-Ho Jang, Chun-Hyung Cho, Ho-Young Cha, 2017, IEEE Electron Device Letters.

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

K. Seo, H. Cha, T. Jang, 2019, Japanese Journal of Applied Physics.

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

S. An, H. Cha, Hyun-Seop Kim, 2022, Applied Physics Letters.

GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation

H. Cha, K. Seo, Hyun-Seop Kim, 2020 .

Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

Hyun-Seop Kim, Seoweon Heo, Ho-Young Cha, 2016 .

Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

K. Seo, Hyungtak Kim, H. Cha, 2018 .