C. Yoo

发表

Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films

C. Hwang, S. Hyun, H. Kim, 2018, Advanced Electronic Materials.

Ultra-thin EBL (encapsulated barrier layer) for ferroelectric capacitor

I. Park, S. Kang, Sang-Min Lee, 1997 .

Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch

Young Jae Kwon, Yoon Kyeung Lee, C. Hwang, 2018, Nanotechnology.

Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2020, Crystal Growth & Design.

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Byung Joon Choi, C. Hwang, I. Im, 2019, Micromachines.

Prevention of degradation of (Ba,Sr)TiO3 during forming gas anneal by a SiO2 capped (Ba,Sr)RuO3 electrode

H. Horii, D. Choi, Young-Bae Kim, 2003 .

Compositional variation of metallorganic chemically vapor deposited SrTiO3 thin films along the capacitor hole having a diameter of 0.15 μm

C. Hwang, Jaehoon Park, D. Hwang, 2001 .

Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method

Hong-bae Park, Hanjin Lim, C. Kang, 1999 .

Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor

C. Hwang, S. Hyun, Ho-In Lee, 2021 .

Integration Issues of (Ba,Sr)TiO 3 Thin Films in High Density Devices

Hong-bae Park, Hanjin Lim, D. Hwang, 1999 .

Atomic layer deposition of chalcogenides for next-generation phase change memory

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2021 .

Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode.

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, ACS applied materials & interfaces.

Effect of SiO2 Film Deposition on the Ferroelectric Properties of a Pt/Pb(Zr, Ti)O3/Pt Capacitor

Sang In Lee, C. Yoo, Moon Yong Lee Moon Yong Lee, 1997 .

Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

C. S. Hwang, S. Jeon, C. Yoo, 2023, ACS Applied Electronic Materials.

Electrical properties of (Ba,Sr)TiO3 on (Sr,Ca)RuO3 electrode

Sang In Lee, D. Choi, F. Ohuchi, 1999 .

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

Yoon Kyeung Lee, C. Hwang, Sijung Yoo, 2018 .

Effects of annealing of (Ba,Sr)RuO3 bottom electrodes on the electrical properties of (Ba,Sr)TiO3 thin films

D. Choi, Young-wook Park, C. Yoo, 2001 .

Metal–Organic CVD of a (Ba,Sr)RuO3 Oxide Electrode Using a Single Cocktail Source

Hyunchul Kim, D. Choi, Young-Bae Kim, 2005 .

Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage.

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2020, ACS applied materials & interfaces.

Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, Chemistry of Materials.

Interface Analysis of MIM Capacitor Using ZrN Electrodes and ALD-ZrO2 Dielectrics

J. Moon, Hyejung Choi, Younsoo Kim, 2010 .

Leakage Current Improvement of Doped and Bilayer High-k for MIM Capacitor

S. Nam, Hanjin Lim, C. Yoo, 2010 .

Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta2O5/Ru Capacitor for 50 nm Dynamic Random Access Memory

U. Chung, J. Moon, Hanjin Lim, 2005 .

Top-to-Bottom Local Epitaxial Growth of the Two-Dimensional Antimony Telluride Film by Atomic Layer Deposition Using Sacrificial Germanium Telluride

C. S. Hwang, S. Jeon, C. Yoo, 2023, Chemistry of Materials.

Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals

Woohyun Kim, Cheol Seong Hwang, Yoon Kyeung Lee, 2019, Micromachines.

Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, Chemistry of Materials.

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

C. Hwang, S. Ivanov, Taehong Gwon, 2017 .