A. Vapaille

发表

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

R. Castagné, A. Vapaille, R. Castagné, 1971 .

Interface states in a cleaved metal-silicon junction

A. Vapaille, C. Barret, 1979 .

A study of interface states in metal‐GaAs 〈110〉 structures by Schottky capacitance spectroscopy

A. Vapaille, C. Barret, F. Chekir, 1983 .

Stoichiometry effects on Schottky barrier and interface states in GaAs {001}/Al system

J. Massies, A. Vapaille, C. Barret, 1983 .

Interfacial states spectrum of a metal-silicon junction

A. Vapaille, C. Barret, 1976 .

Instabilities in silicon devices : silicon passivation and related instabilities

Gérard Barbottin, A. Vapaille, André Vapaille, 1986 .

Apparent interface state density introduced by the spatial fluctuations of surface potential in an m.o.s. structure

R. Castagné, A. Vapaille, 1970 .

Study of metal-semiconductor interface states using Schottky capacitance spectroscopy

A. Vapaille, C. Barret, F. Chekir, 1983 .

Study of PtGaAs interface states

A. Vapaille, C. Barret, 1978 .

Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers

A. Vapaille, J. Gutierrez, G. Prudon, 1990 .