R. Bailey

Reliability properties of low voltage PZT ferroelectric capacitors and arrays

H. McAdams, J. McPherson, K. Udayakumar, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process

H. McAdams, K. Udayakumar, J. Rodriguez, 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

K. Remack, J. Gertas, K. Boku, 2007 .

Reliability properties of low-voltage ferroelectric capacitors and memory arrays

K. Remack, K. Boku, T. Moise, 2004, IEEE Transactions on Device and Materials Reliability.

Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process

J. Rodriguez, K. Remack, K. Boku, 2002, Digest. International Electron Devices Meeting,.

FRAM memory technology - advantages for low power, fast write, high endurance applications

John Rodriquez, K. R. Udayakumar, Scott R. Summerfelt, 2005, 2005 International Conference on Computer Design.