Shih-Chien Liu

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Yueh-Chin Lin, E. Chang, Yen-Ku Lin, 2018, IEEE Electron Device Letters.

Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

E. Chang, B. Tran, Yen-Teng Ho, 2015, Electronic Materials Letters.

AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

S. Samukawa, H. Hsu, E. Chang, 2016, IEEE Electron Device Letters.

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect

H. Hsu, E. Chang, Che-Yang Chiang, 2014, IEEE Electron Device Letters.

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

B. Majlis, C. Dee, Yueh-Chin Lin, 2018, IEEE Journal of the Electron Devices Society.

GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Bo-Yuan Chen, Edward Yi Chang, Ting-En Hsieh, 2014, IEEE Electron Device Letters.

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

B. Majlis, C. Dee, Yueh-Chin Lin, 2017, IEEE Journal of the Electron Devices Society.

Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation

B. Majlis, C. Dee, E. Chang, 2015 .