Yoshiaki Nakata

发表

Temperature characteristics of light emission spectra and threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers

Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata, 1999, Photonics West.

Quantum-dot semiconductor optical amplifiers

Mitsuru Sugawara, Yoshiaki Nakata, Hiroji Ebe, 2002, SPIE/OSA/IEEE Asia Communications and Photonics.

Improvement of temperature stability in columnar quantum dots by introducing side barriers with larger bandgap energy for semiconductor optical amplifiers

Yasuhiko Arakawa, Mitsuru Sugawara, Yoshiaki Nakata, 2012, Other Conferences.

Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy

Yoshiaki Nakata, Eizo Miyauchi, Shunichi Muto, 1989 .

Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1-x As/GaAs quantum dot lasers

Hiroshi Ishikawa, Mitsuru Sugawara, Kohki Mukai, 2000 .

Ultrafast optical signal processing based on quantum-dot semiconductor optical amplifiers: Theory and experiment

Yasuhiko Arakawa, Tomoyuki Akiyama, Mitsuru Sugawara, 2003 .

25 Gbps direct modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers

Yasuhiko Arakawa, Yu Tanaka, Mitsuru Sugawara, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

Self-organized quantum dots and quantum dot lasers (invited)

Hajime Shoji, Mitsuru Sugawara, Kohki Mukai, 1998 .

Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices

Haruhiko Kuwatsuka, Hiroshi Ishikawa, Tomoyuki Akiyama, 2001 .

Near- 1.3-µm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots

Yoshiaki Nakata, Naoki Yokoyama, Shunichi Muto, 1995 .

QUANTUM DOT INFRARED PHOTODETECTOR USING MODULATION DOPED INAS SELF-ASSEMBLED QUANTUM DOTS

Naoto Horiguchi, Yoshiaki Nakata, Pierre Petroff, 1999 .

Recent progress of self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb/s directly modulated lasers and 40 Gb/s signal-regenerative amplifiers

M. Ishida, Tomoyuki Akiyama, Yoshiaki Nakata, 2006 .

Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1996 .

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1 and a new scheme of 3R regenerators

Hiroshi Ishikawa, Tomoyuki Akiyama, Mitsuru Sugawara, 2002 .

Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

Yoshiaki Nakata, Akito Kuramata, Masataka Higashiwaki, 2017 .

Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

Yoshiaki Nakata, Naoki Yokoyama, Yoshihiro Sugiyama, 1997 .

Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

Haruhiko Kuwatsuka, Hiroshi Ishikawa, Tomoyuki Akiyama, 2000 .

Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers

Hiroshi Ishikawa, Mitsuru Sugawara, Kohki Mukai, 2000 .

A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

Yoshiaki Nakata, Satoshi Hiyamizu, Shunichi Muto, 1987 .

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition

Yoshiaki Nakata, Hisao Sudo, Hiroji Ebe, 2003 .

New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

Yoshiaki Nakata, Naoki Yokoyama, Shunichi Muto, 1995 .

Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier

Yasuhiko Arakawa, Tomoyuki Akiyama, Mitsuru Sugawara, 2004 .

Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots

Mitsuru Sugawara, Yoshiaki Nakata, Osamu Wada, 2002 .

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

Kohki Mukai, Yoshiaki Nakata, Naoki Yokoyama, 2000 .

Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1997 .

Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

Tomoyuki Akiyama, Yoshiaki Nakata, Hiroji Ebe, 2002 .

Application of Narrow Emission Spectrum ( 25 me V ) closely-Stacked Structrue to Quantum Dot Lasers

Hajime Shoji, H. Ishikawa, Kohki Mukai, 1997 .

Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots

Yoshiaki Nakata, Naoki Yokoyama, Tatsuya Usuki, 2005 .

Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1998 .

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

Tomoyuki Akiyama, Yoshiaki Nakata, Osamu Wada, 2004 .

Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in PIN diode

Naoto Horiguchi, Yoshiaki Nakata, Naoki Yokoyama, 1997 .

Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy

Yoshiaki Nakata, Naoki Yokoyama, Shunichi Muto, 1995 .

Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Yoshiaki Nakata, Naoki Yokoyama, Shunichi Muto, 2000 .

Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments

Yasuhiko Arakawa, M. Ishida, Tomoyuki Akiyama, 2004 .

Room temperature continuous-wave lasing in photonic crystal nanocavity.

Yasuhiko Arakawa, Naoto Kumagai, Satomi Ishida, 2006, Optics express.

Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1997 .

A 65 nm CMOS technology with a high-performance and low-leakage transistor, a 0.55 /spl mu/m/sup 2/ 6T-SRAM cell and robust hybrid-ULK/Cu interconnects for mobile multimedia applications

Naoto Horiguchi, Naoyoshi Tamura, Takayuki Ohba, 2003, IEEE International Electron Devices Meeting 2003.

Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature

Yasuhiko Arakawa, Naoto Kumagai, Satomi Ishida, 2006 .

Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1996 .

Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

M. Ishida, Tomoyuki Akiyama, Yoshiaki Nakata, 2005 .

Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s

Hiroshi Ishikawa, Tomoyuki Akiyama, Mitsuru Sugawara, 2001 .

Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE

Yoshiaki Nakata, Satoshi Hiyamizu, Shunichi Muto, 1986 .

Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 µm bands

Yasuhiko Arakawa, Tomoyuki Akiyama, Mitsuru Ekawa, 2005 .

Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata, 1999 .