C. Prasad

Procedure for estimating permanent total enclosure costs. Report for December 1998--February 1999

M. E. Lukey, C. Prasad, D. A. Toothman, 1999 .

Procedure for estimating permanent total enclosure costs

M. E. Lukey, C. Prasad, D. A. Toothman, 1999 .

Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology

J. Jopling, C. Prasad, T. Ghani, 2009, 2009 IEEE International Reliability Physics Symposium.

Effects of Hot Carrier Stress on Reliability of Strained-Si Mosfets

M. Agostinelli, C. Prasad, S. Dey, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Dielectric breakdown in a 45 nm high-k/metal gate process technology

J. Jopling, M. Agostinelli, C. Prasad, 2008, 2008 IEEE International Reliability Physics Symposium.

Gate dielectric TDDB characterizations of advanced High-k and metal-gate CMOS logic transistor technology

C. Prasad, S. Ramey, J. Hicks, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).