P. G. Lecomber

发表

Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors

J. Shaw, M. Hack, P. G. Lecomber, 1990 .

Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

A. J. Hughes, A. J. Snell, K. Mackenzie, 1981 .

Amorphous silicon analogue memory devices

A. E. Owen, J. Hajto, S. M. Gage, 1989 .

The characteristics and properties of optimised amorphous silicon field effect transistors

A. J. Snell, K. Mackenzie, W. Spear, 1983 .

Transient and stress effects in amorphous silicon thin-film transistors

M. Thompson, M. Hack, P. G. Lecomber, 1994 .

Transient and Stress Effects in Amorphous Silicon Thin-Film Transistors

M. Hack, P. G. Lecomber, M. F. Willums, 1993 .

Analogue memory effects in metal/a-Si:H/Metal memory devices

A. J. Snell, A. Owen, M. Rose, 1991 .

Chapter 6 The Development of the a-Si: H Field-Effect Transistor and Its Possible Applications

W. Spear, P. G. Lecomber, 1984 .

Amorphous silicon/Langmuir-Blodgett film field effect transistor

M. Petty, G. Roberts, W. Spear, 1983 .

An Investigation of a-Si:H Thin Film Transistors by A Comparison of Transient Measurements and Numerical Simulations.

J. Shaw, M. Hack, P. G. Lecomber, 1992 .

Density-of-states and transient simulations of amorphous-silicon devices

J. Shaw, M. Hack, P. G. Lecomber, 1991 .

Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition

A. G. Fitzgerald, P. G. Lecomber, Y. Masaki, 1993 .

Non-steady state photo-EMF induced by the dynamic grating technique in a-Si:H films

A. Kosarev, P. G. Lecomber, G. S. Trofimov, 1991 .

Amorphous silicon technology

Y. Hamakawa, M. Thompson, P. G. Lecomber, 1988 .

Electronic properties of microcrystalline silicon prepared in the glow discharge plasma

W. Spear, G. Willeke, P. G. Lecomber, 1983 .

Structural and electrical properties of SiNx:H films

R. Gibson, P. G. Lecomber, Y. Masaki, 1993 .

Focused session on device physics

P. G. Lecomber, 1987 .

Substitutional and interstitial doping of amorphous silicon nitride

W. Spear, R. Gibson, P. G. Lecomber, 1987 .

Doping and the Density of States of Amorphous Silicon

P. G. Lecomber, 1981 .

Amorphous silicon technology-1990

Malcolm J. Thompson, Yoshihiro Hamakawa, P. C. Taylor, 1990 .

Electrical, optical and luminescence properties of a-Si/SiN multilayers

M. Hopkinson, W. Spear, I. Austin, 1985 .

Applications and defects in amorphous silicon

P. G. Lecomber, 1987 .

The effect of structure on the electronic properties of a-Si:H

A. Kosarev, R. Gibson, P. G. Lecomber, 1991 .

Applications of amorphous silicon devices

P. G. Lecomber, 1992 .

Amorphous Silicon-Electronics into the 21st Century

P. G. Lecomber, 1991 .

An investigation of some fundamental properties of a-Si from measurements of interface and surface effects

W. Spear, R. Gibson, P. G. Lecomber, 1983 .

Preparation and Applications of Amorphous Silicon

P. G. Lecomber, 1986 .

Amorphous Silicon Thin Film Transistors and Memory Devices

P. G. Lecomber, 1985 .

Applications of Amorphous Silicon

P. G. Lecomber, 1985 .

Applications of amorphous silicon in electronic devices

P. G. Lecomber, 1985 .

The investigation of charge transport in compensated amorphous silicon

W. Spear, P. G. Lecomber, D. Goldie, 1990 .

An Investigation of the Behaviour of a-Si:H Thin Film Transistors Fabricated With Different Proximity Recovery Layer Doping Levels

M. Hack, P. G. Lecomber, M. F. Willums, 1992 .

Transport in the electron tail states of amorphous silicon

W. Spear, P. G. Lecomber, D. Goldie, 1987 .

Comments on the calculation of the extended state electron mobility in amorphous silicon

W. Spear, J. Marshall, P. G. Lecomber, 1985 .

The Electron Mobility in Amorphous Silicon Under Double Injection

W. Spear, P. G. Lecomber, D. Goldie, 1988 .

Chapter 15 Electronic Switching in Amorphous Silicon Junction Devices

A. Owen, W. Spear, J. Hajtó, 1984 .

Fundamental and applied work on glow discharge material

W. Spear, P. G. Lecomber, 1984 .

The switching mechanism in amorphous silicon junctions

A. J. Snell, A. Owen, W. Spear, 1985 .

Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

S. M. Gage, A. J. Snell, A. Owen, 1987 .

Some new results on transport and density of state distribution in glow discharge microcrystalline silicon

W. Spear, G. Willeke, P. G. Lecomber, 1983 .

Photoluminescence properties of a-(Si/SiN):H multilayers: A comparison with bulk alloys

M. Hopkinson, R. Gibson, P. G. Lecomber, 1987 .

ODMR detected via the electroluminescence in p+-i-n+ a-Si:H cells

W. Spear, K. Homewood, P. G. Lecomber, 1984 .

Spin effects in p+-i-n+ a-Si:H cells; photovoltaic detected magnetic resonance (PDMR)

W. Spear, K. Homewood, P. G. Lecomber, 1983 .

INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS

W. Spear, R. Gibson, P. G. Lecomber, 1981 .

Plasma deposited microcrystalline and amorphous silicon — a comparative study of photoluminescence

W. Spear, P. G. Lecomber, G. Diprose, 1983 .

A new vertically integrated amorphous silicon addressable image sensor

A. J. Snell, W. Spear, P. G. Lecomber, 1984 .

The characteristics and properties of optimised a-Si FETs and their application in integrated image sensors

A. J. Snell, K. Mackenzie, W. Spear, 1983 .

Anomalous high zero bias resistance in metal - amorphous silicon - metal structures

S. M. Gage, A. J. Snell, A. Owen, 1989 .

Aspects of Non-Volatility in a-Si:H Memory Devices

A. J. Snell, A. Owen, M. Rose, 1992 .

Observation of Quantized Ballistic Transport in Amorphous Silicon Memory Structures

A. J. Snell, A. Owen, M. Rose, 1990 .

Determination of the microscopic prefactor of the conductivity of a-Si:H using temperature dependent field-effect measurements

K. Weber, P. Thomas, P. G. Lecomber, 1987 .