N. Okada

Carrier transport in polycrystalline silicon films deposited by a layer‐by‐layer technique

Charles M. Fortmann, Deyan He, Isamu Shimizu, 1994 .

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

A. Nishida, T. Mogami, T. Toyama, 2012 .

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Ohji, K. Itoh, Hiroshi Ito, 2011 .

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

Tohru Mogami, Akio Nishida, Yasuyoshi Nagai, 2011 .

Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion

A. Nishida, T. Tsunomura, T. Mogami, 2011 .

Enhanced optoelectronic conduction in polycrystalline silicon films deposited by a layer-by-layer technique using SiF/sub 4//H/sub 2/

D. He, N. Okada, I. Shimizu, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Carrier transport and structural properties of polysilicon films prepared by layer-by-layer technique

D. He, N. Okada, I. Shimizu, 1994 .