H. Kusai

Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

H. Aochi, M. Fujiwara, Y. Mitani, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Fabrication of field-effect transistor devices with fullerodendron by solution process

A. Fujiwara, Y. Iwasa, H. Kusai, 2006 .

Metallic phase in the metal-intercalated higher fullerene Rb8.8(7)C84

S. Okada, S. Nagase, T. Takenobu, 2005 .

Large magnetoresistance in rubrene-Co nano-composites

Yoshishige Suzuki, M. Shiraishi, T. Shinjo, 2007 .

Fabrication of field‐effect transistor devices with fullerene related materials

A. Fujiwara, H. Kusai, Y. Kubozono, 2006 .

Fabrication of field-effect transistor device with higher fullerene, C88

H. Kusai, Y. Kubozono, Eiji Kuwahara, 2005 .

A nuclear magnetic resonance study on rubrene-cobalt nanocomposites

Yoshishige Suzuki, T. Nozaki, M. Shiraishi, 2008, 0802.3728.

Re-examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

M. Saitoh, Y. Kamimuta, K. Ariyoshi, 2020, 2020 IEEE Symposium on VLSI Technology.

Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

T. Takayanagi, H. Kusai, Y. Kubozono, 2005 .