J. Tewg

发表

On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention Optimization

Yung-Huei Lee, Y.-L.R. Lu, W. McMahon, 2009, IEEE Transactions on Electron Devices.

Physical and electrical properties of Ta–N, Mo–N, and W–N electrodes on HfO2 high-k gate dielectric

S. Chatterjee, Y. Kuo, J. Tewg, 2006 .

Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films

Y. Kuo, J. Tewg, J. Lu, 2004 .

Effects of the TaNx interface layer on doped tantalum oxide high-k films

Jun Lu, Y. Kuo, J. Tewg, 2004 .

Hafnium-Doped Tantalum Oxide High-k Gate Dielectrics

Yue Kuo, Jiang Lu, Jun-Yen Tewg, 2006 .

Zirconium-Doped Tantalum Oxide Gate Dielectric Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride Gate Electrodes

Y. Kuo, J. Tewg, J. Lu, 2005 .

Influence of a 5 Å Tantalum Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum Oxide High-k Films

Y. Kuo, J. Tewg, J. Lu, 2005 .

Tantalum Nitride Interface Layer Influence on Dielectric Properties of Hafnium Doped Tantalum Oxide High Dielectric Constant Thin Films

Y. Kuo, J. Tewg, J. Lu, 2003 .

Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

Yue Kuo, J. Lu, S. Chatterjee, 2006, Microelectron. Reliab..

Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium

Y. Kuo, J. Tewg, J. Lu, 2005 .