J. Jang

发表

LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory

Sung-Jin Choi, D. M. Kim, D. Kim, 2020 .

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

Sung-Jin Choi, D. M. Kim, D. Kim, 2020 .

Density-of-States-Based Physical Model for Ink-Jet Printed Thiophene Polymeric TFTs

Jong Won Chung, Sung-Jin Choi, Kyung Rok Kim, 2020, IEEE Transactions on Electron Devices.

Effects of Structure and Oxygen Flow Rate on the Photo-response of Amorphous IGZO-based Photodetector Devices

Sung-Jin Choi, D. M. Kim, D. Kim, 2017 .

Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors

Sung-Jin Choi, Hyun-Suk Kim, D. M. Kim, 2020, IEEE Electron Device Letters.

Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect.

Seok‐Woo Lee, D. Kim, Saeroonter Oh, 2022, ACS applied materials & interfaces.

Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors

Sung-Jin Choi, D. M. Kim, D. Kim, 2018, IEEE Transactions on Electron Devices.

Effect of Anion Composition on the Bias Stress Stability in Zn-O-N Thin-Film Transistors

Sung-Jin Choi, Hyun-Suk Kim, D. M. Kim, 2020, IEEE Electron Device Letters.

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

H. Kwon, Sung-Jin Choi, Ha-Yun Jeong, 2019, Materials.

SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height

Sung-Jin Choi, D. M. Kim, Jingyu Park, 2019, 2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO).

Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

B. Park, D. Kwon, Jae-pyoung Ahn, 2018, NPG Asia Materials.

19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors

Sung-Jin Choi, D. M. Kim, D. Kim, 2018 .

Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT

Sung-Jin Choi, D. M. Kim, D. Kim, 2021, IEEE Electron Device Letters.

The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors

Sung-Jin Choi, Seongho Cho, D. M. Kim, 2019, IEEE Electron Device Letters.

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Jaewon Park, Sung-Jin Choi, S. Kim, 2017, IEEE Electron Device Letters.

Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors

Byung-Gook Park, Sung-Jin Choi, D. M. Kim, 2019, Sensors and Actuators B: Chemical.

A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence

Sung-Jin Choi, D. M. Kim, D. Kim, 2020 .

Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications

Jun Tae Jang, Sung-Jin Choi, Dong Myong Kim, 2017 .

Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions

Sung-Jin Choi, Yongwoo Lee, Jieun Lee, 2018, Journal of Alloys and Compounds.

Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency

Seongjae Cho, D. M. Kim, D. Kim, 2020 .

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

G. Kar, A. Belmonte, S. Subhechha, 2022, Scientific Reports.

Effect of Positive Bias Stress on the Back-Gate Voltage-Modulated Threshold Voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors

Chang‐ho Oh, Sung-Jin Choi, J. Bae, 2022, IEEE Electron Device Letters.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

Sung-Jin Choi, Hyun-Suk Kim, D. M. Kim, 2015, ACS applied materials & interfaces.

Semiconducting Carbon Nanotube Schottky Diode and Integrated Circuit Applications

Sungho Kim, Sung-Jin Choi, Yongwoo Lee, 2018, 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO).

Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors

Min-Ho Kang, Sung-Jin Choi, Yongwoo Lee, 2020 .

Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

Jaewon Park, Dong-Wook Park, D. Kim, 2021, Applied Sciences.

Effect of direct current sputtering power on the behavior of amorphous indium-gallium- zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Sung-Jin Choi, Hyun-Suk Kim, D. M. Kim, 2015 .

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Sung-Jin Choi, J. Bae, D. M. Kim, 2021, Micromachines.

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

Jun Tae Jang, Sung-Jin Choi, Dong Myong Kim, 2019, Electronics.

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

Jun Tae Jang, Sung-Jin Choi, Dae Hwan Kim, 2020, IEEE Access.

Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction.

Young Heon Kim, Jun Tae Jang, Sangik Lee, 2017, Nano letters.

The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

Sung-Jin Choi, D. M. Kim, D. Kim, 2018, IEEE Transactions on Electron Devices.

Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Sung-Jin Choi, D. M. Kim, Saeroonter Oh, 2017 .

Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors

Sung-Jin Choi, D. M. Kim, D. Kim, 2015 .

21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions

Sung-Jin Choi, D. M. Kim, Saeroonter Oh, 2017 .

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

Sung-Jin Choi, D. M. Kim, D. Kim, 2017, IEEE Electron Device Letters.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

Sung-Jin Choi, Hyun-Suk Kim, D. M. Kim, 2015, ACS applied materials & interfaces.

Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior

D. Kim, Hyungjin Kim, J. Jang, 2021, ACS Applied Electronic Materials.

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Min-Seung Choi, D. Kim, J. Jang, 2023, Applied Physics Letters.