C. Tavarès

发表

Effects of RIE treatments for {111} diamond substrates on the growth of P‐doped diamond thin films

H. Kanda, S. Koizumi, C. Tavarès, 2005 .

Raman characterization of boron-doped {111} homoepitaxial diamond layers

F. Omnès, M. Mermoux, F. Jomard, 2006 .

Static and transient electrical properties of (111) diamond p–n diodes

F. Jomard, P. Muret, C. Tavarès, 2007 .

n-type phosphorus-doped polycrystalline diamond on silicon substrates

F. Omnès, F. Jomard, É. Bustarret, 2008 .

Hall electron mobility in diamond

M. Katagiri, S. Koizumi, J. Pernot, 2006 .

{111}-oriented diamond films and p/n junctions grown on B-doped type Ib substrates

F. Jomard, É. Bustarret, E. Gheeraert, 2005 .

Homoepitaxial {111}‐oriented diamond pn junctions grown on B‐doped Ib synthetic diamond

M. Wade, D. Araújo, É. Bustarret, 2004 .

Electronic properties of boron-doped {111}-oriented homoepitaxial diamond layers

F. Omnès, J. Pernot, É. Bustarret, 2006 .